Product Information

STWA12N120K5

STWA12N120K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 long leads package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 18.3534 ea
Line Total: USD 55.06

208 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
208 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3
Multiples : 1

Stock Image

STWA12N120K5
STMicroelectronics

3 : USD 18.3534
10 : USD 16.977
50 : USD 14.9427
100 : USD 13.6955

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOT STH12N120K5-2 STP12N120K5 2 TO-220 H PAK-2 1200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of merit) 3 3 Ultra-low gate charge 2 2 1 1 100% avalanche tested TO-247 TO-247 long leads Zener-protected Figure 1: Internal schematic diagram Applications D(TAB) D(2, TAB) Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 G(1) G(1) technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(2, 3) S(3) 2 ( TO-220, TO-247 and (H PAK-2) TO-247 long leads) Table 1: Device summary Order code Marking Package Packing 2 STH12N120K5-2 H PAK-2 Tape and reel STP12N120K5 TO-220 12N120K5 STW12N120K5 TO-247 Tube STWA12N120K5 TO-247 long leads April 2015 DocID022133 Rev 4 1/21 www.st.com This is information on a product in full production. Contents STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 HPAK-2 package information ......................................................... 11 4.2 TO-220 type A package information ................................................ 14 4.3 TO-247 package information ........................................................... 16 4.4 TO-247 long leads package information ......................................... 18 5 Revision history ............................................................................ 20 2/21 DocID022133 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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