Product Information

STWA40N95DK5

STWA40N95DK5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 long leads package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 11.3425 ea
Line Total: USD 6805.5

0 - Global Stock
MOQ: 600  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 600
Multiples : 1

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STWA40N95DK5
STMicroelectronics

600 : USD 14.9825
1000 : USD 14.8325
2000 : USD 14.685
2500 : USD 14.5375
3000 : USD 14.3925
4000 : USD 14.2488
5000 : USD 14.1063
10000 : USD 13.965
20000 : USD 13.825
50000 : USD 13.6875

0 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

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STWA40N95DK5
STMicroelectronics

1 : USD 17.1504
10 : USD 15.768
25 : USD 15.1092
100 : USD 13.3164
600 : USD 11.88
1200 : USD 11.8692

0 - WHS 3


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

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STWA40N95DK5
STMicroelectronics

1 : USD 16.256
3 : USD 15.374
600 : USD 14.7333

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

STW40N95DK5, STWA40N95DK5 Datasheet N-channel 950 V, 120 m typ., 38 A, MDmesh DK5 Power MOSFETs in TO-247 and TO-247 long leads packages Features V R max. I Order code DS DS(on) D STW40N95DK5 950 V 130 m 38 A STWA40N95DK5 3 2 3 1 2 Fast-recovery body diode 1 Best R x area TO-247 TO-247 long leads DS(on) Low gate charge, input capacitance and resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Applications Switching applications G(1) Description These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 S(3) fast-recovery diode series. The MDmesh DK5 combines very low recovery charge AM01475v1 noZen (Q ) and recovery time (t ) with an excellent improvement in R * area and rr rr DS(on) one of the most effective switching behaviors, ideal for half bridge and full bridge converters. Product status links STW40N95DK5 STWA40N95DK5 Product summary Order code STW40N95DK5 Marking 40N95DK5 Package TO-247 Packing Tube Order code STWA40N95DK5 Marking 40N95DK5 Package TO-247 long leads Packing Tube DS9918 - Rev 5 - August 2021 www.st.com For further information contact your local STMicroelectronics sales office.STW40N95DK5, STWA40N95DK5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 38 C I A D Drain current (continuous) at T = 100 C 24 C (1) I Drain current (pulsed) 152 A DM P Total power dissipation at T = 25 C 450 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. I 38 A, di/dt 400 A/s, V (peak) V , V = 760 V. SD DS (BR)DSS DD 3. V 760 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.28 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA Table 3. Avalanche characteristics Symbol Parameter Value Unit I Maximum current during repetitive or single pulse avalanche 13 A AR E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 730 mJ AS J D AR DD DS9918 - Rev 5 page 2/14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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