STY60NK30Z N-CHANNEL 300V - 0.033 - 60A Max247 Zener-Protected SuperMESHPower MOSFET TYPE V R I Pw DSS DS(on) D STY60NK30Z 300 V < 0.045 60 A 450 W TYPICAL R (on) = 0.033 DS EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 VERY GOOD MANUFACTURING 2 1 REPEATIBILITY Max247 DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is tak- INTERNAL SCHEMATIC DIAGRAM en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH EFFICIENCY SWITCHING DC/DC CONVETERS FOR PLASMA TVs IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STY60NK30Z Y60NK30Z Max247 TUBE February 2004 1/8STY60NK30Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 300 V DS GS V Drain-gate Voltage (R =20k ) 300 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 60 A D C I Drain Current (continuous) at T = 100C 37.5 A D C I ( ) Drain Current (pulsed) 240 A DM P Total Dissipation at T = 25C 450 W TOT C Derating Factor 3.57 W/C V Gate source ESD(HBM-C=100 pF, R=1.5 K) 6000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns T Operating Junction Temperature j -55 to 150 C T Storage Temperature stg ( ) Pulse width limited by safe operating area (1) I 60A, di/dt 200A/s, V V ,T T SD DD (BR)DSS j JMAX. THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.28 C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 60 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 0.7 J AS (starting T =25 C, I =I ,V =50V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8