BTA12, BTB12, T1205 T1210, T1235, T1250 Datasheet 12 A Snubberless, logic level and standard Triacs A2 Features Medium current Triac Low thermal resistance with clip bonding G Low thermal resistance insulation ceramic for insulated BTA A1 High commutation (4Q) or very high commutation (3Q) capability A2 BTA series UL1557 certified (file ref: 81734) Packages are RoHS (2011/65/EU) compliant G G A2 A2 A1 A1 Description TO-220AB TO-220AB Ins. A2 Available either in through-hole or surface mount packages, the BTA12, BTB12 and T12xx Triac series are suitable for general purpose mains power AC switching. They can be used as ON/OFF function in applications such as static relays, heating G regulation or induction motor starting circuit. They are also recommended for phase A2 A1 control operations in light dimmers and appliance motors speed controllers. DPAK The Snubberless versions (W suffix and T12xx) are especially recommended for use on inductive loads, because of their high commutation performance. By using an internal ceramic pad, the Snubberless series provide an insulated tab (rated at 2500 V ) complying with UL standards (file reference: E81734). RMS Logic Level BTA12-600TW and BTA12-600SW offer low holding current, ideal to design light dimmers for LED lamps. Product status link BTA12 BTB12 T1205 T1210 T1235 T1250 Product summary I 12 A T(RMS) V /V 600 and 800 V DRM RRM I (Snubberless) 5 / 10 / 35 / 50 mA GT I (standard) 25 / 50 GT DS2115 - Rev 12 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit T = 105 C TO-220AB, DPAK c I RMS on-state current (full sine wave) 12 A T(RMS) T = 90 C TO-220AB Ins. c f = 50 Hz t = 20 ms 120 Non repetitive surge peak on-state current (full cycle, T j I A TSM initial = 25 C) t = 16.7 ms f = 60 Hz 126 p 2 2 2 t = 10 ms I t I t value for fusing 78 A s p Critical rate of rise of on-state current I = 2 x I , tr G GT dl/dt f = 120 Hz T = 125 C 50 A/s j 100 ns V / V + DRM RRM V /V t = 10 ms T = 25 C Non repetitive surge peak off-state voltage V DSM RSM p j 100 I t = 20 s T = 125 C Peak gate current 4 A GM p j P T = 125 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) - Snubberless and logic level j (3 quadrants) T1235 T1250 T1205 T1210 BTB12- BTB12- Symbol Parameter Quadrant BTB12-TW BTB12-SW Unit CW BW BTA12-TW BTA12-SW BTA12-CW BTA12-BW (1) I I - II - III Max. 5 10 35 50 mA GT V = 12 V, R = 30 D L V I - II - III Max. 1.3 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA I - II - III Max. 10 15 35 50 mA T H I - III Max. 10 25 50 70 (2) I = 1.2 x I I mA L G GT II Max. 15 30 60 80 (2) V = 67% V , gate open, T = 125 C Max. 20 40 500 1000 V/s dV/dt D DRM j (dV/dt)c = 0.1 V/s, T = 125 C Min. 3.5 6.5 j (2) (dV/dt)c = 10 V/s, T = 125 C Min. 1.0 2.9 A/ms (dl/dt)c j Without snubber, T = 125 C Min. 6.5 12 j 1. Minimum I is guaranteed at 5 % of I max. GT GT 2. For both polarities of A2 referenced to A1 DS2115 - Rev 12 page 2/16