T410-600T STMicroelectronics

T410-600T electronic component of STMicroelectronics
T410-600T STMicroelectronics
T410-600T Triacs
T410-600T  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of T410-600T Triacs across the USA, India, Europe, Australia, and various other global locations. T410-600T Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

Part No.T410-600T
Manufacturer:STMicroelectronics
Category:Triacs
Description:Triac; 600V; 4A; 10mA; THT; logic level; tube; TO220AB
Datasheet:T410-600T Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
2500: USD 0.3875 ea
Line Total: USD 968.75 
Availability : 485
  
Ship by Thu. 25 Jun to Wed. 01 Jul
QtyUnit Price
2500$ 0.3875
5000$ 0.3812
7500$ 0.3812
10000$ 0.375
12500$ 0.3688
  

Availability485
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.3875
5000$ 0.3812
7500$ 0.3812
10000$ 0.375
12500$ 0.3688


Availability303
Ship by Tue. 23 Jun to Thu. 25 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.086
5$ 1.3888
10$ 1.2166
25$ 1.0416
35$ 0.5558


Availability6790
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.5776
2000$ 0.5514


Availability36762
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 353
Multiples : 1
QtyUnit Price
353$ 0.7379
410$ 0.6356
500$ 0.5634
1000$ 0.4521

   
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T410-600T from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T410-600T and other electronic components in the Triacs category and beyond.

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T4 series 4 A Triacs Datasheet production data . Table 1. Main characteristics Symbol Value Unit I 4A T(rms) * V , V 600 to 800 V DRM RRM I 5 to 35 mA GT Table 2. Device summary * 2 % 7 (1) . ,3 Symbol Marking * T405-xxxB T405-xxxB-TR T405-xxxH * . 3 T405-xxxT T410-xxxB T410-xxxB-TR see Table 11 Features T410-xxxH Three quadrants Triac T410-xxxT 600 to 800 V V /V DRM RRM T435-xxxB T435-xxxB-TR Applications T435-xxxH General purpose AC inductive loads T435-xxxT Motor control circuits 1. xxx = Voltage: 600 V, 700 V or 800 V (see Table 10). Small home appliances Description Based on STs Snubberless / logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads. They are recommended for applications using universal motors, electro valves, kitchen aid equipments, power tools, and dishwashers. November 2016 DocID7699 Rev 9 1/15 This is information on a product in full production. www.st.com 15Characteristics T4 series 1 Characteristics Table 3. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit On-state rms current IPAK, DPAK, I T = 110 C 4 A T(rms) c TO-220AB (full sine wave) F = 50 Hz t = 20 ms 30 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 31 ItI t value for fusing t = 10 ms 5.1 A s p Critical rate of rise of on-state dI/dt F = 120 Hz T = 125 C 50 A/s j current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to +150 stg C T Operating junction temperature range - 40 to +125 j Table 4. Electrical characteristics (T = 25 C, unless otherwise stated) j Value Unit Symbol Test conditions Quadrant T405 T410 T435 (1) I V = 12 V, R = 30 I - II - III Max. 5 10 35 mA GT D L V V = 12 V, R = 30 I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k , T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA Max. 10 15 35 mA H T I - III Max. 102550 I I = 1.2 I mA L G GT II Max. 15 30 60 (2) dV/dt V = 67% V , gate open T = 125 C Min. 20 40 400 V/s D DRM j (dV/dt)c = 0.1 V/s 1.8 2.7 (2) (dI/dt)c (dV/dt)c = 10 V/s T = 125 C Min. 0.9 2.0 A/ms j (without snubber) 2.5 1. Minimum I is guaranteed at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1 2/15 DocID7699 Rev 9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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