Product Information

TIP102

TIP102 electronic component of STMicroelectronics

Datasheet
Transistors Darlington NPN Power Darlington
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.3575 ea
Line Total: USD 357.5

426 - Global Stock
Ships to you between
Tue. 07 May to Mon. 13 May
MOQ: 1000  Multiples: 440
Pack Size: 440

 More Buying Options & Price Grid(s)

Availability Price Quantity
426 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 1000
Multiples : 440

Stock Image

TIP102
STMicroelectronics

1000 : USD 0.3575

150 - Warehouse 2


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

TIP102
STMicroelectronics

1 : USD 1.3279
10 : USD 1.1444
30 : USD 1.0418
100 : USD 0.9273
500 : USD 0.876
1000 : USD 0.8543

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Category
Brand Category
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Additional Infomation About Product

TIP102 TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 AUDIO POWER AMPLIFIER 1 GENERAL POWER SWITCHING DC-AC CONVERTER TO-220 EASY DRIVER FOR LOW VOLTAGE DC MOTOR DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic INTERNAL SCHEMATIC DIAGRAM package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. R Typ. = 5 K R Typ. = 150 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP102 PNP TIP107 VCBO Collector-Base Voltage (IE = 0) 100 V V Collector-Emitter Voltage (I = 0) 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 8 A C I Collector Peak Current 15 A CM I Base Current 1 A B o Ptot Total Dissipation at T 25 C 80 W case o 2 W T 25 C amb o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j * For PNP types voltage and current values are negative. 1/4 April 2003 TIP102 / TIP107 THERMAL DATA o R Thermal Resistance Junction-case Max 1.56 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 50 V 50 A CEO CE Current (I = 0) B I Collector Cut-off V = 100 V 50 A CBO CB Current (I = 0) E I Emitter Cut-off Current V = 5 V 8 mA EBO EB (I = 0) C V * Collector-Emitter I = 30 mA 100 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = 3 A I = 6 mA 2 V CE(sat) C B Saturation Voltage IC = 8 A IB = 80 mA 2.5 V V * Base-Emitter Voltage I = 8 A V = 4 V 2.8 V BE C CE h * DC Current Gain I = 3 A V = 4 V 1000 20000 FE C CE I = 8 A V = 4 V 200 C CE V * Forward Voltage of I = - I = 10 A 2.8 V F F C Commutation Diode (IB = 0) * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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