TPP25011RL STMicroelectronics

TPP25011 Application Specific Discretes OVERVOLTAGE and OVERCURRENT A.S.D. PROTECTION for TELECOM LINE FEATURES n UNIDIRECTIONAL FUNCTION n PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V n PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA n SURGE CURRENT CAPABILITY I = 30A 10/1000 s PP SO-8 DESCRIPTION Dedicated to sensitive telecom equipment protec- tion, this device can provide both voltage and cur- rent triggered protection with a very tight tolerance. The breakdown voltage can be easily programmed by using an external zener diode. A multiple protection mode can be also performed when using several zener diodes, providing to SCHEMATIC DIAGRAM each line interface an optimized protection level. The current limiting function is achieved with the use of a resistor between the gate and the cath- ode. The value of the resistor will determine the level of the desired current. COMPLIES WITH THE FOLLOWING STANDARDS : CCITT K17 : 10/700 s 1.5 kV 5/310 s38A VDE 0433 : 10/700 s2kV 5/310 s 40 A (*) CNET : 0.5/700 s 1.5 kV 0.2/310 s38A FCC part 68 : 2/10 s 2.5 kV 2/10 s 75 A (*) BELLCORE TR-NWT-000974 : 10/1000 s1 kV 10/1000 s 30 A (*) (*) with series resistors or PTC. TM: ASD is trademarks of STMicroelectronics. 1/7 October 2003 - Ed: 5TPP25011 ABSOLUTE MAXIMUM RATINGS (T =25C) amb Symbol Parameter Value Unit I Peak pulse current (see note 1) 10/1000s 30 A PP 5/310s 40 2/10s 75 Non repetitive surge peak on-state current I t = 10ms 5 A TSM p (F = 50Hz) t=1s 3.5 T Storage temperature range -55to+150 C stg T Maximum junction temperature 150 j Note 1 : Pulse waveform : %I PP 10/1000st =10st =1000s r p 100 5/310st =5st =310s r p 2/10st =2st =10s r p 50 0 t t t r p THERMAL RESISTANCES Symbol Parameter Value Unit R 170 C/W th (j-a) Junction to ambient 2/7