Product Information

TPP25011RL

TPP25011RL electronic component of STMicroelectronics

Datasheet
Thyristor Surge Protection Devices - TSPD 250V 30A Unidirect
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500

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TPP25011RL
STMicroelectronics

2500 : USD 1.449
25000 : USD 1.4162
250000 : USD 1.216
1250000 : USD 1.0863
2500000 : USD 1.0842
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

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TPP25011RL
STMicroelectronics

1 : USD 6.804
10 : USD 2.8489
25 : USD 2.4958
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

TPP25011RL
STMicroelectronics

1 : USD 4.599
10 : USD 1.885
100 : USD 1.5038
500 : USD 1.3356
1000 : USD 1.1806
2500 : USD 1.163
5000 : USD 1.163
10000 : USD 1.1188
25000 : USD 1.0748
N/A

Obsolete
0 - WHS 4

MOQ : 28
Multiples : 1

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TPP25011RL
STMicroelectronics

28 : USD 2.1726
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Breakover Current IBO Max
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Current Rating
Off-State Leakage Current Vdrm Idrm
Series
Brand
Operating Junction Temperature
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

TPP25011 Application Specific Discretes OVERVOLTAGE and OVERCURRENT A.S.D. PROTECTION for TELECOM LINE FEATURES n UNIDIRECTIONAL FUNCTION n PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V n PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA n SURGE CURRENT CAPABILITY I = 30A 10/1000 s PP SO-8 DESCRIPTION Dedicated to sensitive telecom equipment protec- tion, this device can provide both voltage and cur- rent triggered protection with a very tight tolerance. The breakdown voltage can be easily programmed by using an external zener diode. A multiple protection mode can be also performed when using several zener diodes, providing to SCHEMATIC DIAGRAM each line interface an optimized protection level. The current limiting function is achieved with the use of a resistor between the gate and the cath- ode. The value of the resistor will determine the level of the desired current. COMPLIES WITH THE FOLLOWING STANDARDS : CCITT K17 : 10/700 s 1.5 kV 5/310 s38A VDE 0433 : 10/700 s2kV 5/310 s 40 A (*) CNET : 0.5/700 s 1.5 kV 0.2/310 s38A FCC part 68 : 2/10 s 2.5 kV 2/10 s 75 A (*) BELLCORE TR-NWT-000974 : 10/1000 s1 kV 10/1000 s 30 A (*) (*) with series resistors or PTC. TM: ASD is trademarks of STMicroelectronics. 1/7 October 2003 - Ed: 5TPP25011 ABSOLUTE MAXIMUM RATINGS (T =25C) amb Symbol Parameter Value Unit I Peak pulse current (see note 1) 10/1000s 30 A PP 5/310s 40 2/10s 75 Non repetitive surge peak on-state current I t = 10ms 5 A TSM p (F = 50Hz) t=1s 3.5 T Storage temperature range -55to+150 C stg T Maximum junction temperature 150 j Note 1 : Pulse waveform : %I PP 10/1000st =10st =1000s r p 100 5/310st =5st =310s r p 2/10st =2st =10s r p 50 0 t t t r p THERMAL RESISTANCES Symbol Parameter Value Unit R 170 C/W th (j-a) Junction to ambient 2/7

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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