TS110-8 High surge voltage 1.25 A SCR for circuit breaker Datasheet - production data Description Thanks to highly sensitive triggering levels, the TS110-8 series is suitable for circuit breaker applications where the available gate current is * limited The 1250 V direct surge voltage capability of the TS110-8 enables high robustness of the whole * circuit breaker. The low leakage current of the . TS110-8 reduces power consumption over the * entire lifetime of the circuit breaker. The high 60%IODW / off-state immunity (200 V/s) insures the non tripping of the breaker in case of electrical fast transient (EFT) on the mains * The TS110-8 is available in through-hole TO-92 . * package with GAK and KGA pinout and in 2 ZLWK 7 * . S LQRXW 2 ZLWK 7 .* S LQRXW SMBflat-3L package. Table 1. Device summary Features Symbol Value Unit On-state rms current, 1.25 A I 1.25 A T(RMS) Repetitive peak off-state voltage, 800 V V , V 800 V DRM RRM Non-repetitive direct surge peak off-state V , V 1250, 900 V DSm RSM voltage, 1250 V I 100 A GT Non-repetitive reverse surge peak off-state voltage, 900 V T 125 C j Triggering gate current, 100 A High off-state immunity: 200 V/s ECOPACK 2 compliant component Applications GFCI (Ground Fault Circuit Interrupter) AFCI (Arc Fault Circuit Interrupter) RCD (Residual Current Device) RCBO (Residual Current circuit Breaker with Overload protection) AFDD (Arc Fault Detection Device) October 2014 DocID026589 Rev 1 1/10 This is information on a product in full production. www.st.comCharacteristics TS110-8 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-92 T = 53 C l I On-state rms current (180 conduction angle) 1.25 A T(RMS) SMBflat-3L T = 109 C c TO-92 T = 53 C Average on-state current I IT 0.8 A (AV) (180 conduction angle) SMBflat-3L T = 109 C c t = 8.3 ms 21 p Non repetitive surge peak on-state current T = 25 C j initial t = 10 ms 20 p I A TSM 1st step: one surge every 5 seconds, 25 surges 25 times 12 A t = 10 ms T = 90 C p amb 25 times 16 A 2nd step: one surge every 5 seconds, 25 surges 2 ItI t Value for fusing t = 10 ms, 25 C 2 A S p Critical rate of rise of on-state current F = 50 Hz, 125 C 100 I = 2 x I , t 100 ns dI/dt G GT r A/s Non repetitive critical current rate of rise at break-over, see Figure 17, V > V 200 D DSm V , DRM Repetitive peak off-state AC voltage, R = 220 T = 125 C 800 V GK j V RRM Non-repetitive direct surge peak off-state voltage, V t = 10 ms T = 25 C 1250 V DSm p j R = 220 GK Non-repetitive reverse surge peak off-state V t = 10 ms T = 25 C 900 V RSM p j voltage, R = 220 GK I Peak gate current t = 20 s T = 125 C 1.2 A GM p j P Average gate power dissipation T = 125 C 0.2 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 3. Electrical characteristics Symbol Test conditions Value Unit Min. 1 I A GT V = 12 V, R = 140 T = 25 C Max. 100 D L j V Max. 0.8 V GT V V = V , R = 33 k, R = 220 T = 125 C Min. 0.1 V GD D DRM L GK j V I = 2 mA T = 25 C Min. 7.5 V RG RG j I I = 50 mA, R = 220 T = 25 C Max. 12 mA H T GK j I I = 5 mA, R = 220 T = 25 C Max. 12 mA L G GK j dV/dt V = 67% V R = 220 T = 125 C Min. 200 V/s D DRM, GK j 2/10 DocID026589 Rev 1