TRD136DT4 STMicroelectronics

TRD136D High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Integrated antiparallel collector-emitter diode 1 Applications TO-252 (DPAK) Electronic ballast for fluorescent lighting Electronic transformer for halogen lamps Description This device is an NPN power transistor Figure 1. Internal schematic diagram manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Table 1. Device summary Part number Marking Package Packaging TRD136DT4 TRD136D TO-252 Tape and reel June 2011 Doc ID 018979 Rev 1 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12 change without notice.Contents TRD136D Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 2.2 Test circuits . 7 3 Package mechanical data . 8 4 Revision history . 11 2/12 Doc ID 018979 Rev 1