USBUF01P6 STMicroelectronics

USBUF01P6 electronic component of STMicroelectronics
USBUF01P6 STMicroelectronics
USBUF01P6 ESD Protection Diodes / TVS Diodes
USBUF01P6  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of USBUF01P6 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. USBUF01P6 ESD Protection Diodes / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. USBUF01P6
Manufacturer: STMicroelectronics
Category: ESD Protection Diodes / TVS Diodes
Description: EMI Filter Beads, Chips & Arrays unidirect 2line fltr 47pF -25db 900MHz
Datasheet: USBUF01P6 Datasheet (PDF)
Price (USD)
3000: USD 0.3925 ea
Line Total: USD 1177.5 
Availability : 0
  
QtyUnit Price
3000$ 0.3925

Availability 0
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3925


Availability 0
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.6085

   
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RoHS - XON
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We are delighted to provide the USBUF01P6 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the USBUF01P6 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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USBUF01P6 IPAD EMI filter and line termination for USB upstream ports Features Monolithic device with recommended line termination for USB upstream ports Integrated R series termination and C t t SOT-666IP bypassing capacitors. Integrated ESD protection Figure 1. Functional diagram (top view) Small package size 3.3 V Benefits Rp Rt D1 D4 EMI / RFI noise suppression Ct Required line termination for USB upstream ports GND 3.3 V ESD protection exceeding IEC 61000-4-2 level 4 High flexibility in the design of high density Rt D2 D3 boards Ct Tailored to meet USB 2.0 standard (low speed and full speed data transmission) Complies with the following standards: Description IEC 61000-4-2 level4: The USB specification requires upstream ports to 15 kV (air discharge) be terminated with pull-up resistors from the D+ 8 kV (contact discharge) and D- lines to V . For the implementation of bus MIL STD 883E-Method 3015-7: USB systems, the radiated and conducted EMI Class 3, C = 100 pF, R = 1500 should be kept within the required levels as stated by the FCC regulations. In addition to the 3 positive strikes, 3 negative strikes requirements of termination and EMC (F = 1 Hz) compatibility, the computing devices are required to be tested for ESD susceptibility. Applications The USBUF01P6 provides the recommended line EMI Filter and line termination for USB upstream termination while implementing a low pass filter to ports on: limit EMI levels and providing ESD protection USB Hubs which exceeds IEC 61000-4-2 level 4 standard. The device is packaged in a SOT-666, which is PC peripherals the smallest available lead-frame package (45% smaller than the standard SOT323). TM: IPAD is a trademeark of STMicroelectronics February 2010 Doc ID 9883 Rev 7 1/9 www.st.com 9Characteristics USBUF01P6 1 Characteristics Table 1. Absolute maximum rating (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 air discharge 16 V ESD discharge kV IEC 61000-4-2 contact discharge 9 PP MIL STD 883E - Method 3015-7 25 T Junction temperature 150 C j T Storage temperature range -55 to +150 C stg T Maximum lead temperature for soldering during 10 s at 5 mm for case 260 C L T Operating temperature range -40 to + 85 C op Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Stand-off voltage RM IF V Breakdown voltage BR V Clamping voltage CL VF I Leakage current RM V V V CL BR RM V IRM I Peak pulse current PP T Voltage temperature coefficient V Forward voltage drop Slope = 1/Rd F I PP Rd Dynamic resistance Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 10 V BR R I V = 3.3 V per line 500 nA RM RM R Tolerance 10% 33 t R Tolerance 10% 1.5 k p C Tolerance 20% 47 pF t 2/9 Doc ID 9883 Rev 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max (VA)
SG3
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