VN16BSP-E

VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY Table 1. General Features Figure 1. Package Type V R I V DSS DS(on) OUT CC VN16BPS 40 V 0.06 5.6 A 26 V MAXIMUM CONTINUOUS OUTPUT CURRENT: 20 A T = 85C c 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN 10 UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT 1 INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER PowerSO-10 DISSIPATION DESCRIPTION The VN16BPS is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state and in on state, output shorted to V and overtemperature. Fast demagnetization CC of inductive loads is achieved by negative (-18V) load voltage at turn-off. Table 2. Order Codes Package Tube Tape and Reel PowerSO-10 VN16BSP VN16BSP13TR REV. 3 September 20 13 1/11VN16BSP Figure 2. Block Diagram Table 3. Absolute Maximum Ratings Symbol Parameter Value Unit V Drain-Source Breakdown Voltage 40 V (BR)DSS I Output Current (cont.) at T = 85 C 20 A OUT c I (RMS) RMS Output Current at T = 85 C 20 A OUT c I Reverse Output Current at T = 85 C (f > 1Hz) 20 A R c Input Current 10 mA I IN V Reverse Supply Voltage 4 V CC I Status Current 10 mA STAT V Electrostatic Discharge (1.5 k, 100 pF) 2000 V ESD P Power Dissipation at T = 25 C 82 W tot c T Junction Operating Temperature -40 to 150 C j T Storage Temperature -55 to 150 C stg 2/11