Product Information

Z0405M-0AA2

Z0405M-0AA2 electronic component of STMicroelectronics

Datasheet
Triac; 600V; 4A; 5mA; THT; tube; TO202-3

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.439 ea
Line Total: USD 1.32

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 3
Multiples : 1

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Z0405M-0AA2
STMicroelectronics

3 : USD 0.439
25 : USD 0.3749
48 : USD 0.2827
131 : USD 0.2672
1500 : USD 0.2569

     
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Type Of Semiconductor Component
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Max Off-State Voltage
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Z04 Standard 4 A Triacs Main features A2 Symbol Value Unit G I 4A T(RMS) A1 V /V 600 to 800 V DRM RRM I 3 to 25 mA GT (Q ) 1 Description A1 A2 G The Z04 series is suitable for general purpose AC switching applications. They can be found in TO202-3 applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. Order codes Part Number Marking (1) (1) Z04xxyF Z04xxyF 1. xx = sensitivity, y = voltage Table 1. Absolute maximum ratings Symbol Parameter Value Unit T = 25 C amb I RMS on-state current (full sine wave) 4A T(RMS) = 30 C T l F = 50 Hz t = 20 ms 20 Non repetitive surge peak on-state current I A TSM (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 21 ItI t Value for fusing t = 10 ms 2.2 A s p Critical rate of rise of on-state current I = G dI/dt F = 120 Hz T = 125 C 20 A/s j 2 x I , t 100 ns GT r I Peak gate current t = 20 s T = 125 C 1.2 A GM p j P Average gate power dissipation T = 125 C 0.2 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j May 2006 Rev 7 1/8 www.st.com 8Characteristics Z04 1 Characteristics Table 2. Electrical Characteristics (Tj = 25 C, unless otherwise specified) Z04 Symbol Test Conditions Quadrant Unit 02 05 09 10 MAX (1) I I - II - III - IV 35 10 25 mA GT . V = 12 V R = 30 D L MAX V ALL 1.3 V GT . V = V R = 3.3 k D DRM L V ALL MIN. 0.2 V GD T = 125 C j MAX (2) I I = 50 mA 35 10 25 mA H T . I - III - IV 610 15 25 MAX I I = 1.2 I mA L G GT . II 12 15 25 50 (2) dV/dt V = 6 % V gate open T = 110 C MIN. 10 20 100 200 V/s D DRM j (2) (dV/dt)c (dI/dt)c = 1.8 A/ms T = 110 C MIN. 0.5 1 2 5 V/s j 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. Table 3. Static Characteristics Symbol Test Conditions Value Unit (1) V I = 5.5 A t = 380 s T = 25 C MAX. 2.0 V TM TM p j (1) V Threshold voltage T = 125 C MAX. 0.95 V to j (1) R Dynamic resistance T = 125 C MAX. 180 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I T = 125 C 0.5 mA RRM j 1. for both polarities of A2 referenced to A1. Table 4. Thermal resistances Symbol Parameter Value Unit R Junction to lead (AC) 15 C/W th(j-I) R Junction to ambient 100 C/W th(j-a) 2/8

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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