Product Information

Z0405MF0AA2

Z0405MF0AA2 electronic component of STMicroelectronics

Datasheet
Triacs DFD THYR TRIAC & RECTIFIER

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 4000
Multiples : 1

Stock Image

Z0405MF0AA2
STMicroelectronics

4000 : USD 0.1819
40000 : USD 0.174
400000 : USD 0.1705
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

Z0405MF0AA2
STMicroelectronics

1 : USD 1.6311
10 : USD 0.796
100 : USD 0.4433
500 : USD 0.3511
1000 : USD 0.2796
2000 : USD 0.2641
N/A

Obsolete
0 - Global Stock

MOQ : 31
Multiples : 31

Stock Image

Z0405MF0AA2
STMicroelectronics

31 : USD 0.2382
100 : USD 0.1931
500 : USD 0.192
1000 : USD 0.1881
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Z04 Standard 4 A Triacs Main features A2 Symbol Value Unit G I 4A T(RMS) A1 V /V 600 to 800 V DRM RRM I 3 to 25 mA GT (Q ) 1 Description A1 A2 G The Z04 series is suitable for general purpose AC switching applications. They can be found in TO202-3 applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. Order codes Part Number Marking (1) (1) Z04xxyF Z04xxyF 1. xx = sensitivity, y = voltage Table 1. Absolute maximum ratings Symbol Parameter Value Unit T = 25 C amb I RMS on-state current (full sine wave) 4A T(RMS) = 30 C T l F = 50 Hz t = 20 ms 20 Non repetitive surge peak on-state current I A TSM (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 21 ItI t Value for fusing t = 10 ms 2.2 A s p Critical rate of rise of on-state current I = G dI/dt F = 120 Hz T = 125 C 20 A/s j 2 x I , t 100 ns GT r I Peak gate current t = 20 s T = 125 C 1.2 A GM p j P Average gate power dissipation T = 125 C 0.2 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j May 2006 Rev 7 1/8 www.st.com 8Characteristics Z04 1 Characteristics Table 2. Electrical Characteristics (Tj = 25 C, unless otherwise specified) Z04 Symbol Test Conditions Quadrant Unit 02 05 09 10 MAX (1) I I - II - III - IV 35 10 25 mA GT . V = 12 V R = 30 D L MAX V ALL 1.3 V GT . V = V R = 3.3 k D DRM L V ALL MIN. 0.2 V GD T = 125 C j MAX (2) I I = 50 mA 35 10 25 mA H T . I - III - IV 610 15 25 MAX I I = 1.2 I mA L G GT . II 12 15 25 50 (2) dV/dt V = 6 % V gate open T = 110 C MIN. 10 20 100 200 V/s D DRM j (2) (dV/dt)c (dI/dt)c = 1.8 A/ms T = 110 C MIN. 0.5 1 2 5 V/s j 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. Table 3. Static Characteristics Symbol Test Conditions Value Unit (1) V I = 5.5 A t = 380 s T = 25 C MAX. 2.0 V TM TM p j (1) V Threshold voltage T = 125 C MAX. 0.95 V to j (1) R Dynamic resistance T = 125 C MAX. 180 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I T = 125 C 0.5 mA RRM j 1. for both polarities of A2 referenced to A1. Table 4. Thermal resistances Symbol Parameter Value Unit R Junction to lead (AC) 15 C/W th(j-I) R Junction to ambient 100 C/W th(j-a) 2/8

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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