Product Information

MPSA92

MPSA92 electronic component of Taitron

Datasheet
PNP High Voltage Medium Power Bipolar Transistor - 300V - hFE=>=40/10mA - Vce(sat)<=0.35V/20mA - fT>=50MHz in TO-92 PKG.

Manufacturer: Taitron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

60: USD 0.8557 ea
Line Total: USD 51.34

58 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 60  Multiples: 1
Pack Size: 1
Availability Price Quantity
58 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 60
Multiples : 1

Stock Image

MPSA92
Taitron

60 : USD 0.8489
160 : USD 0.7718

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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MPSA92 MPSA93 www.centralsemi.com SILICON DESCRIPTION: HIGH VOLTAGE The CENTRAL SEMICONDUCTOR MPSA92 and PNP TRANSISTORS MPSA93 are silicon PNP transistors designed for high voltage applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL MPSA92 MPSA93 UNITS Collector-Base Voltage V 300 200 V CBO Collector-Emitter Voltage V 300 200 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C) MPSA92 MPSA93 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=200V - 250 - - nA CBO CB I V=160V - - - 250 nA CEO CE I V=3.0V - 100 - 100 nA EBO EB BV I=100A 300 - 200 - V CBO C BV I=1.0mA 300 - 200 - V CEO C BV I=100A 5.0 - 5.0 - V EBO E V I =20mA, I=2.0mA - 0.5 - 0.4 V CE(SAT) C B V I =20mA, I=2.0mA - 0.9 - 0.9 V BE(SAT) C B h V =10V, I=1.0mA 25 - 25 - FE CE C h V =10V, I=10mA 40 - 40 - FE CE C h V =10V, I=30mA 25 - 25 - FE CE C f V =20V, I=10mA, f=100MHz 50 - 50 - MHz T CE C C V =20V, I=0, f=1.0MHz - 6.0 - 8.0 pF ob CB E R2 (15-December 2014)MPSA92 MPSA93 SILICON HIGH VOLTAGE PNP TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (15-December 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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