Product Information

1N4006G-K A0G

1N4006G-K A0G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers Diode 1A 800V DO-204AL DO-41

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3201 ea
Line Total: USD 0.32

28345 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28127 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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1N4006G-K A0G
Taiwan Semiconductor

1 : USD 0.2491
10 : USD 0.1804
100 : USD 0.0878
1000 : USD 0.051
3000 : USD 0.0439
9000 : USD 0.0332
45000 : USD 0.0296
99000 : USD 0.0261

     
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4 1N4001G-K - 1N4007G-K Taiwan Semiconductor 1A, 50V - 1000V Glass Passivated Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT High current capability, Low VF I 1 A F(AV) High reliability V 50 - 1000 V RRM High surge current capability I 30 A Low power loss, high efficiency FSM Compliant to RoHS Directive 2011/65/EU and T 150 C J MAX in accordance to WEEE 2002/96/EC Package DO-204AL (DO-41) Halogen-free according to IEC 61249-2-21 Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) Adapters TV Monitor MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94V-0 flammability rating Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 0.33 g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 PARAMETER SYMBOL UNIT G-K G-K G-K G-K G-K G-K G-K Marking code on the device 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G Repetitive peak reverse V 50 100 200 400 600 800 1000 V RRM voltage Reverse voltage, total rms V 35 70 140 280 420 560 700 V R(RMS) value Maximum DC blocking V 50 100 200 400 600 800 1000 V DC voltage Forward current I 1 A F(AV) Surge peak forward current, 8.3 ms single half I 30 A FSM sine-wave superimposed on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:A1612 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 80 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) - 1 Forward voltage per diode I = 1A,T = 25C V V F J F - 5 A T = 25C J (2) Reverse current rated V per diode I R R - 100 A T = 125C J 10 - Junction capacitance 1 MHz, V =4.0V C pF R J Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PACKIN PACKING CODE PART NO. PACKAGE PACKING G CODE SUFFIX 3,000 / Ammo box A0 DO-41 (52mm taping) R0 DO-41 5,000 / 13 Paper reel 1N400xG-K G (Note 1, 2) 5,000 / 13 Paper reel R1 DO-41 (Reverse) B0 DO-41 1,000 / Bulk packing Notes: 1. defines voltage from 50V (1N4001G-K) to 1000V (1N4007G-K) 2. Whole series with green compound (halogen-free) EXAMPLE P/N PACKING PACKING CODE EXAMPLE P/N PART NO. DESCRIPTION CODE SUFFIX 1N4001G-K A0G A0 Green compound 1N4001G-K G 2 Version:A1612

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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