Product Information

1N5404GHR0G

1N5404GHR0G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 3A 400V GLASS PASSIVATED RECTIFIER

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5949 ea
Line Total: USD 0.59

3637 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3637 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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1N5404GHR0G
Taiwan Semiconductor

1 : USD 0.4174
10 : USD 0.3231
100 : USD 0.1955
500 : USD 0.1817
1250 : USD 0.1311
2500 : USD 0.1208
10000 : USD 0.1092
25000 : USD 0.1092
50000 : USD 0.1058

     
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RoHS - XON
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1N5400G - 1N5408G Taiwan Semiconductor CREAT BY ART 3A, 50V - 1000V Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-201AD DO-201AD Molding compound, UL flammability classification rating 94V-0 Part No. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Weight: 1.2 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A 1N 1N 1N 1N 1N 1N 1N PARAMETER SYMBOL UNIT 5400G 5401G 5402G 5404G 5406G 5407G 5408G V Maximum repetitive peak reverse voltage 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current I 3 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 125 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.1 1.0 V F 3 A 5 Maximum reverse current rated VR T =25 C J I A R T =125 C 100 J C Typical junction capacitance (Note 2) 25 pF J R 15 JC Typical thermal resistance C/W R 45 JA Operating junction temperature range T - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note1: Pulse Test with PW=300s, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS D1410023 Version: J151N5400G - 1N5408G Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION PART NO. PACKING CODE PART NO. PACKING CODE PACKAGE PACKING SUFFIX SUFFIX A0 DO-201AD 500 / Ammo box R0 DO-201AD 1,250 / 13 Paper reel 1N540xG H G (Note 1) B0 DO-201AD 500 / Bulk packing X0 DO-201AD Forming Note 1: defines voltage from 50V (1N5400G) to 1000V (1N5408G) EXAMPLE PREFERRED PART NO. PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified 1N5408GHA0G 1N5408G H A0 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.1 MAXMUM FORWARD CURRENT DERATING CURVE 100 4 10 3 1 T =125C J 2 0. 1 T =75C J 1 0. 01 T =25C J 0 0. 001 0 25 50 75 100 125 150 0 20 40 60 80 100 120 o AMBIENT TEMPERATURE( C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD FIG. 4 TYPICAL FORWARD CHARACTERISTICS SURGE CURRENT 100 250 10 200 1N5402G-1N5408G 150 1 100 1N5400G-1N5401G 0. 1 50 0 1 10 100 0. 01 0. 6 0.7 0. 8 0.9 1 1.1 1. 2 1.3 NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V) Document Number: DS D1410023 Version: J15 PEAK FORWARD SURGE CURRENT(A) AVERAGE FORWARD CURRENT(A) INSTANTANEOUS REVERSE CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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