Product Information

1N5819 R0G

1N5819 R0G electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 1A 40V AXIAL SCHOTTKY RECTIFIER

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5005 ea
Line Total: USD 0.5

290 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
286 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

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1N5819 R0G
Taiwan Semiconductor

1 : USD 0.3496
10 : USD 0.2415
100 : USD 0.1219
1000 : USD 0.0759
5000 : USD 0.0644
10000 : USD 0.0552
25000 : USD 0.0541
50000 : USD 0.0483

     
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RoHS - XON
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1N5817 1N5819 Taiwan Semiconductor 1A, 20V - 40V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low forward voltage drop I 1 A F Guard ring for overvoltage protection V 20 - 40 V RRM High surge current capability RoHS Compliant I 30 A FSM Halogen-free according to IEC 61249-2-21 T 125 C J MAX Package DO-204AL (DO-41) APPLICATIONS Configuration Single die Switching mode power supply (SMPS) Adapters DC to DC converter MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94V-0 flammability rating Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.330g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 1N5817 1N5818 1N5819 PARAMETER SYMBOL UNIT Marking code on the device 1N5817 1N5818 1N5819 Repetitive peak reverse voltage V 20 30 40 V RRM Reverse voltage, total rms value V 14 21 28 V R(RMS) Forward current I 1 A F Surge peak forward current, 8.3ms single I 30 A FSM half sine wave superimposed on rated load Critical rate of rise of off-state voltage dv/dt 10,000 V/s Junction temperature T -55 to +125 C J Storage temperature T -55 to +125 C STG 1 Version: H2104 1N5817 1N5819 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 100 C/W JA Junction-to-case thermal resistance R 45 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 1N5817 - 0.45 V (1) Forward voltage 1N5818 I = 1A, T = 25C V - 0.55 V F J F 1N5819 - 0.60 V T = 25C - 1 mA J (2) Reverse current rated V I R R T = 100C - 10 mA J Junction capacitance 1MHz, V = 4.0V C 55 - pF R J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING 1N581x DO-204AL (DO-41) 5,000 / Tape & Reel 1N581x A0G DO-204AL (DO-41) 3,000 / Ammo box 1N581xH DO-204AL (DO-41) 5,000 / Tape & Reel 1N581xHA0G DO-204AL (DO-41) 3,000 / Ammo box Notes: 1. x defines voltage from 20V (1N5817) to 40V (1N5819) 2. H means AEC-Q101 qualified 2 Version: H2104

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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