Product Information

BA159

BA159 electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 1.0 Amp 1000 Volt 250ns
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0273 ea
Line Total: USD 0.14

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 5
Multiples : 1

Stock Image

BA159
Taiwan Semiconductor

5 : USD 0.0273
25 : USD 0.0257
100 : USD 0.0211
1000 : USD 0.0187
2000 : USD 0.0179
4000 : USD 0.0172

Read More Specifications

     
Manufacturer
Product Category
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Repetitive Reverse Voltage Vrrm Max
Reverse Recovery Time Trr Max
Diode Case Style
No Of Pins
Current If Vf
Current Ifsm
External Diameter
External Length / Height
Junction Temperature Tj Max
Operating Temperature Range
LoadingGif

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Additional Infomation About Product

Fast Diode Features: High surge current capability Void-free plastic in a DO-41 package 1A operation at T = 55C with no thermal runaway A Fast switching for high efficiency Exceeds environmental standards of MIL-S-19500/228 Specifications: Mechanical Data: Case : Moulded plastic, DO-41 Terminals : Axial leads, solderable per MIL-STD-202, Method 208 Polarity : Colour band denotes cathode Mounting position : Any Weight : 0.012 oz, 0.3g Maximum Ratings and Electrical Characteristics: Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameters BA157 BA159 Units Maximum Recurrent Peak Reverse Voltage 400 1,000 Maximum RMS Voltage 280 700 V Maximum DC Blocking Voltage 400 1,000 Maximum Average Forward Rectified 1 Current 0.375 (9.5mm) Lead Length at T = 55C A A Peak Forward Surge Current 8.3ms Single Half Sine-Wave 30 Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1A 1.3 V Maximum reverse current T = 25C 5 J A 500 at rated DC blocking voltage T = 100C J www.element14.com www.farnell.com www.newark.com Page <1> 27/03/13 V1.0Fast Diode Parameters BA157 BA159 Units Typical Junction Capacitance (Note 1) 12 pF Maximum reverse recovery time (Note 2) 150 250 C/W Operating and Storage Temperature Range -50 to +150 C Notes: 1. Measured at 1MHz and applied reverse voltage of 4V. 2. Reverse recovery test conditions: I = 0.5A, I = 1A, I = 0.25A. F R RR Ratings and Characteristic Curves Notes: 1. Rise Time = 7nS maximum Input Impedance = 1M, 22pF 2. Rise Time = 10nS maximum Source Impedance = 50 Figure 1 - Reverse Recovery Time Characteristics and Test Circuit Diagram www.element14.com www.farnell.com www.newark.com Page <2> 27/03/13 V1.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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