Product Information

BAS116

BAS116 electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor Diodes - General Purpose, Power, Switching Switching diode 225 mW
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.0318 ea
Line Total: USD 190.8

0 - Global Stock
MOQ: 6000  Multiples: 6000
Pack Size: 6000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 6000
Multiples : 6000

Stock Image

BAS116
Taiwan Semiconductor

6000 : USD 0.0299
9000 : USD 0.0241
24000 : USD 0.023
45000 : USD 0.0195
99000 : USD 0.0184

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BAS116 Taiwan Semiconductor 200mA, 75V Switching SMD Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 200 mA F High surge current capability V 75 V RRM Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant V at I =150mA 1.25 V F F Halogen-free according to IEC 61249-2-21 T Max. 150 C J Package SOT-23 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAS116 UNIT Marking code on the device JV Power dissipation P 225 mW D Repetitive peak reverse voltage V 75 V RRM Mean forward current I 200 mA O Non-Repetitive peak forward surge current t=1s I 500 mA FSM Thermal resistance (Junction to Ambient)(Note1) R 330 C/W JA Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG Note1: Valid provided that electrodes are kept at ambient temperature 1 Version: F2001 BAS116 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1.0mA, T = 25C - 0.9 F J - 1.0 I = 10mA, T = 25C F J Forward voltage V V F I = 50mA, T = 25C - 1.1 F J I = 150mA, T = 25C - 1.25 F J I =100A, T = 25C 75 - Reverse voltage V V R J R V =75V T = 25C - 5 R J Reverse current I nA R V =75V T = 150C - 80 R J 2.0 f=1 MHz, V =0V - Junction capacitance R C pF J I =10mA, I =10mA, F R 3.0 - Reverse recovery time t s rr R =100, I =1mA L rr ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BAS116 RF SOT-23 3K / 7 Reel BAS116 RFG SOT-23 3K / 7 Reel Note: G means green compound (halogen free) 2 Version: F2001

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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