Product Information

BAS70-05 RF

BAS70-05 RF electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching SOT-23 70V 0.07A Sch ottky Diode
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2427 ea
Line Total: USD 0.24

433 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
331 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

BAS70-05 RF
Taiwan Semiconductor

1 : USD 0.2427
10 : USD 0.1725
100 : USD 0.084
1000 : USD 0.0495
3000 : USD 0.0425
9000 : USD 0.0379
24000 : USD 0.0345
45000 : USD 0.0345
99000 : USD 0.0299

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

BAS70 / -04 / -05 / -06 Taiwan Semiconductor 70mA, 70V SMD Schottky Barrier Diode FEATURES KEY PARAMETERS Low turn-on voltage PARAMETER VALUE UNIT Fast switching I 70 mA F Moisture sensitivity level: level 1, per J-STD-020 V 70 V RRM RoHS Compliant I 0.1 A Halogen-free according to IEC 61249-2-21 FSM V at I =15mA 1 V F F T Max. 125 C J APPLICATIONS Package SOT-23 Adapters For switching power supply Low stored charge Inverter MECHANICAL DATA Case: SOT-23 Molding compound: UL flammability classification rating 94V-0 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BAS70 73 BAS70-04 74 Marking code on the device BAS70-05 75 BAS70-06 76 Repetitive peak reverse voltage V 70 V RRM Working peak reverse voltage V RWM 70 V DC blocking voltage V 70 V R RMS reverse voltage V R(RMS) 49 V Forward current I 70 mA F Non-repetitive peak forward surge current t = 1s I 100 mA FSM Power dissipation P 200 D mW Junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 STG C 1 Version: F2001 BAS70 / -04 / -05 / -06 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 625 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1mA, T = 25C 0.41 F J (1) - Forward voltage per diode V V F I = 15mA, T = 25C 1.00 F J (2) - 100 Reverse current per diode V = 50V T = 25C I nA R J R I =10A 70 - Reverse Breakdown Voltage V V R (BR) - 2 f = 1 MHz, V =0V Junction capacitance R C pF J I =I =10mA, R =100, F R L - 5 Reverse Recovery Time t ns rr I =1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1) BAS7xxxx RF SOT-23 3K / 7 Reel BAS7xxxx RFG SOT-23 3K / 7 Reel BAS7xxxx-B0 RF SOT-23 3K / 7 Reel BAS7xxxx-B0 RFG SOT-23 3K / 7 Reel BAS7xxxx-D0 RF SOT-23 3K / 7 Reel BAS7xxxx-D0 RFG SOT-23 3K / 7 Reel Note: 1. xxx defines part no. from0 to0-06 2 Version: F2001

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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