Product Information

BAT54 RF

BAT54 RF electronic component of Taiwan Semiconductor

Datasheet
Diode Small Signal Schottky 30V 0.2A 3-Pin SOT-23 T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.0226 ea
Line Total: USD 135.6

0 - Global Stock
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 6000
Multiples : 3000

Stock Image

BAT54 RF
Taiwan Semiconductor

6000 : USD 0.0226

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temperature Classification
Operating Temp Range
Peak Non-Repetitive Surge Current
Rev Curr
Avg Forward Curr Max
Peak Rep Rev Volt
Rev Recov Time
Rad Hardened
Pin Count
Package Type
LoadingGif

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BAT54 / A / C / S Taiwan Semiconductor Small Signal Product 230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix on packing code and prefix on date code SOT-23 MECHANICAL DATA - Case: Bend lead SOT-23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s - Polarity: Indicated by cathode band - Weight: 8 0.5 mg - Marking Code: KL1,KL2,KL3,KL4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Peak Pepetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 30 V RWM V DC Reverse Voltage R Forward Continuous Current I 200 mA F Repetitive Peak Forward current (tp1S 0.5) I 300 mA FRM Forward Surge Current t<1.0s I 600 mA FSM Power Dissipation Pd 200 mW Thermal Resistance, Junction to Ambient R 500 C/W JA Operating and Storage Temperature T , T -55 to 125 j STG C PARAMETER SYMBOL MIN MAX UNIT I =100A Reverse Breakdown Voltage V 30 -- V R (BR) I =0.1mA -- 0.24 V F I =1mA -- 0.32 V F I =10mA V Forward Voltage -- 0.40 V F F I =30mA -- 0.50 V F I =100mA -- 1.00 V F V =25V I Reverse Current -- 2.0 A R R Total Capacitance V =1V, f=1.0MHz C -- 10 pF R T I =I =10mA, R =100, I =1mA Reverse Recovery Time t -- 5 ns F R L RR rr Version: E14 Document Number: DS S1404001BAT54 / A / C / S Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 1 Typical Forward Characteristics Fig. 2 Typical Reverse Characteristics 1000 1000 o 125 C 100 100 o 75 C 10 10 o 125 C 1 o 25 C o -40 C o 25 C 1 0. 1 0. 01 0. 1 0 5 10 15 20 25 30 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 Reverse Voltage (V) V , Instantaneous Forward Voltage (V) F Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation Curve 250 14 12 200 10 150 8 6 100 4 50 2 0 0 0 25 50 75 100 125 150 0 4 8 12 16 20 24 28 Reverse Voltage (V) Ambient Temperature (C) Version: E14 Document Number: DS S1404001 Power Dissipation (mW) I , Instantaneous Forward Current (mA) F Junction Capacitance (pF) Reverse Current (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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