GPA807HC0 Taiwan Semiconductor

GPA801 GPA807 Taiwan Semiconductor 8A, 50V - 1000V Standard Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Glass passivated chip junction I 8 A F High efficiency, Low V F V 50 - 1000 V RRM High current capability High reliability I 150 A FSM High surge current capability T 150 C J MAX RoHS Compliant Package TO-220AC Halogen-free according to IEC 61249-2-21 Configuration Single die APPLICATIONS DC to DC converter Switching mode converters and inverters General purpose MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked TO-220AC Weight: 1.80g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A GPA GPA GPA GPA GPA GPA GPA PARAMETER SYMBOL UNIT 801 802 803 804 805 806 807 GPA GPA GPA GPA GPA GPA GPA Marking code on the device 801 802 803 804 805 806 807 Repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 35 70 140 280 420 560 700 V R(RMS) Forward current I 8 A F Surge peak forward current 8.3ms single half sine wave I 150 A FSM superimposed on rated load Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: G2103 GPA801 GPA807 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 2.5 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) Forward voltage I = 8A, T = 25C V - 1.1 V F J F T = 25C - 5 A J (2) Reverse current rated V I R R T = 125C - 100 A J Junction capacitance 1MHz, V = 4.0V C 50 - pF R J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING GPA8x TO-220AC 50 / Tube TO-220AC GPA8xH 50 / Tube Notes: 1. x defines voltage from 50V(GPA801) to 1000V(GPA807) 2. H means AEC-Q101 qualified 2 Version: G2103