Product Information

HER101G R0

HER101G R0 electronic component of Taiwan Semiconductor

Datasheet
Diode Switching 50V 1A 2-Pin DO-41 T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4586: USD 0.0498 ea
Line Total: USD 228.38

0 - Global Stock
MOQ: 4586  Multiples: 4586
Pack Size: 4586
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 4586
Multiples : 4586

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HER101G R0
Taiwan Semiconductor

4586 : USD 0.0498

     
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Product Category
RoHS - XON
Icon ROHS
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HER101G - HER108G 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41 RoRoHHSS Pb COCOMMPPLIALIANCENCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic DO-41 Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode Dimensions in inches and (millimeters) Marking Diagram High temperature soldering guaranteed: 260 /10s /.375 , (9.5mm) lead lengths at 5 lbs, (2.3kg) tension HER10XG = Specific Device Code Weight: 0.34 grams G = Green Compound Y = Year WW = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% HER HER HER HER HER HER HER HER Symbol Units Type Number 101G 102G 103G 104G 105G 106G 107G 108G Maximum Recurrent Peak Reverse Voltage V 50 100 200 300 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 210 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 300 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1A F(AV) .375 (9.5mm) Lead Length T =55 A Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.0 1.3 1.7 V F 1 A Maximum DC Reverse Current at T =25 5 uA A I R Rated DC Blocking Voltage T =125 150 uA A Maximum Reverse Recovery Time (Note 2) Trr 50 75 nS Typical Junction Capacitance (Note 3) 15 10 Cj pF R 60 JA O Typical Thermal Resistance (Note 4) C/W R 15 JC O Operating Temperature Range T - 65 to + 150 J C O Storage Temperature Range T - 65 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 4: Mount on Cu-Pad Size 5mm x 5mm on PCB Version:D10RATINGS AND CHARACTERISTIC CURVES (HER101G THRU HER108G) FIG. 2- TYPICAL REVERSE FIG.1- MAXIMUM FORWARD CURRENT DERATING CHARACTERISTICS CURVE 1000 2 RESISTIVE OR INDUCTIVE LOAD 100 TA=100 1 10 TA=75 0 1 0 25 50 75 100 125 150 175 o AMBIENT TEMPERATURE ( C) TA=25 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 40 35 8.3mS Single Half Sine Wave 30 JEDEC Method 25 20 FIG. 5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISRICS 15 100 10 TA=25 5 0 1 10 100 10 HER105G NUMBER OF CYCLES AT 60 Hz HER101G-HER104G 1 FIG. 4- TYPICAL JUNCTION CAPACITANCE 70 0.1 60 50 HER106G-HER108G 40 0.01 HER101G-HER105G 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) TA=25 20 10 HER106G-HER108G 0 0.1 1 10 100 1000 REVERSE VOLTAGE (V) Version:D10 AVERAGE FORWARD A PEAK FORWARD SURGE A JUNCTION CAPACITANCE (pF) CURRENT (A) CURRENT (A) INSTANTANEOUS FORWARD A INSTANTANEOUS REVERSE A CURRENT (A) CURRENT (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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