HS1M F2 Taiwan Semiconductor

HS1M F2 electronic component of Taiwan Semiconductor
HS1M F2 Taiwan Semiconductor
HS1M F2 Schottky Diodes & Rectifiers
HS1M F2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HS1M F2 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. HS1M F2 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. HS1M F2
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Diode Switching 1KV 1A 2-Pin SMA T/R
Datasheet: HS1M F2 Datasheet (PDF)
Price (USD)
5953: USD 0.0437 ea
Line Total: USD 260.15 
Availability : 15133
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
5953$ 0.0437

Availability 15133
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 5953
Multiples : 1
QtyUnit Price
5953$ 0.0437


Availability 15133
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 5953
Multiples : 1
QtyUnit Price
5953$ 0.0437

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temp Range
Avg Forward Curr Max
Operating Temperature Classification
Rev Curr
Peak Rep Rev Volt
Rad Hardened
Package Type
Pin Count
Rectifier Type
Peak Non-Repetitive Surge Current
Rev Recov Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HS1M F2 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HS1M F2 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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HS1A thru HS1M Taiwan Semiconductor CREAT BY ART High Efficient Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Fast switching for high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 DO-214AC (SMA) Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A HS HS HS HS HS HS HS HS PARAMETER SYMBOL UNIT 1A 1B 1D 1F 1G 1J 1K 1M Maximum repetitive peak reverse voltage V 50 100 200 300 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 210 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 300 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.0 1.3 1.7 V F 1 A 5 Maximum reverse current rated VR T =25 J T =100 I 50 A J R T =125 150 J Maximum reverse recovery time (Note 2) Trr 50 75 ns Typical junction capacitance (Note 3) 20 15 Cj pF O Typical thermal resistance R 70 JA C/W O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS D1405050 Version: I14HS1A thru HS1M Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel Prefix F3 Folded SMA 1,800 / 7 Plastic reel HS1x Suffix (Note 1) F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel E3 Clip SMA 1,800 / 7 Plastic reel N/A E2 Clip SMA 7,500 / 13 Plastic reel Note 1: defines voltage from 50V (HS1A) to 1000V (HS1M) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE HS1M R3 HS1M R3 HS1M R3G R3 G Green compound HS1M HS1MHR3 H R3 AEC-Q101 qualified HS1M RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM AVERAGE FORWARD CURRENT DERATING 1000 1.2 1 TJ=125 100 0.8 0.6 TJ=25 0.4 10 0.2 0 1 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0 20 40 60 80 100 120 140 o LEAD TEMPERATURE ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 4- TYPICAL INSTANTANEOUS FORWARD FIG. 3- MAXIMUM NON-REPETITIVE FORWARD CHARACTERISTICS SURGE CURRENT 100 40 35 HS1A-HS1D 30 10 8.3ms Single Half Sine Wave 25 20 HS1G 1 15 10 5 HS1J-HS1M 0. 1 1 10 100 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V) Document Number: DS D1405050 Version: I14 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE URRENT (A) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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