Product Information

HS5F R7G

HS5F R7G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 50ns 5A 300V High Efficient Recovery Rectifier
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1700: USD 0.3773 ea
Line Total: USD 641.41

0 - Global Stock
MOQ: 1700  Multiples: 1700
Pack Size: 1700

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 850
Multiples : 850

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HS5F R7G
Taiwan Semiconductor

850 : USD 0.3117
1700 : USD 0.2817
4250 : USD 0.2749
9350 : USD 0.2657
24650 : USD 0.2633

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Additional Infomation About Product

creat by ART HS5A - HS5M 5.0AMPS High Efficient Surface Mount Rectifiers SMC/DO-214AB Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: 260/10 seconds at terminals Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260 Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix on packing code & prefix on datecode Mechanical Data Cases: Molded plastic Terminal: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 16mm tape per EIA STD RS-481 Weight: 0.21 grams Ordering Information (example) Packing code Packing code Part No. Package Packing (Green) HS5A SMC 850 / 7 REEL R7 R7G Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. HS HS HS HS HS HS HS HS Symbol Units Parameter 5A 5B 5D 5F 5G 5J 5K 5M V Maximum Recurrent Peak Reverse Voltage 50 100 200 300 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 210 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 300 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 5 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 150 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.0 1.3 1.7 V F 5 A 10 Maximum DC Reverse Current T =25 A I uA R at Rated DC Blocking Voltage T =125 250 A Maximum Reverse Recovery Time (Note 2) Trr 50 75 nS Typical Junction Capacitance (Note 3) 80 50 Cj pF O Typical Thermal Resistance R 60 C/W jA O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied V =4.0 Volts R Version:G13RATINGS AND CHARACTERISTIC CURVES (HS5A THRU HS5M) FIG.1- MAXIMUM FORWARD CURRENT FIG. 2- TYPICAL REVERSE CHARACTERISTICS DERATING CURVE 6 1000 RESISTIVE OR 5 INDUCTIVE LOAD 4 TA=100 3 100 2 1 TA=25 0 10 0 25 50 75 100 12 5 150 o AMBIENT TEMPERATURE ( C) FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 200 1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 FIG. 5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 TA=25 0 TA=25 1 10 100 NUMBER OF CYCLES AT 60 Hz 10 FIG. 4- TYPICAL JUNCTION CAPACITANCE HS5A-HS5D 175 150 125 HS5G HS5A-HS5G 1 100 75 HS5J-HS5M 50 HS5J-HS5M 25 0. 1 TA=25 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 0. 1 1 10 100 1000 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:G13 JUNCTION CAPACITANCE (pF) PEAK FORWARD SURGE URRENT AVERAGE FORWARD (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA) INSTANTANEOUS FORWARD CURRENT (A)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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