VS-80CPH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 40 A FRED Pt FEATURES Common Hyperfast recovery time cathode 2, Base Low forward voltage drop Low leakage current 175 C operating junction temperature 1 Designed and qualified according to 2 3 JEDEC -JESD 47 13 Material categorization: for definitions of compliance TO-247AC 3L Anode Anode 1 2 please see www.vishay.com/doc 99912 DESCRIPTIONS / APPLICATIONS VS-80CPH03... series are the state of the art ultrafast PRIMARY CHARACTERISTICS recovery rectifiers designed with optimized performance of I 2 x 40 A forward voltage drop and ultrafast recovery time. F(AV) The planar structure and the platinum doped life time control V 300 V R guarantee the best overall performance, ruggedness and V at I 0.94 V F F reliability characteristics. t typ. 34 ns rr These devices are intended for use in the output rectification T max. 175 C J stage of welding, SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper Package TO-247AC 3L motor drives. Circuit configuration Common cathode Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Repetitive peak reverse voltage V 300 V RRM per leg 40 Average rectified forward current I T = 133 C F(AV) C total device 80 A T = 25 C, t = 10 ms 320 Non-repetitive peak surge current per leg I FSM J p Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 40 A - 1.07 1.25 F Forward voltage V F I = 40 A, T = 125 C - 0.94 1.10 F J V = V rated - - 10 R R Reverse leakage current I A R T = 125 C, V = V rated - - 300 J R R Junction capacitance C V = 300 V - 75 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 27-Nov-2018 Document Number: 93270 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-80CPH03-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, di /dt = 100 A/s, V = 30 V - 34 - F F R I = 1.0 A, di /dt = 50 A/s, V = 30 V - - 35 F F R Reverse recovery time t ns rr T = 25 C -41- J = 125 C - 62 - T J I = 40 A F T = 25 C - 3.3 - J Peak recovery current I di /dt = - 200 A/s A RRM F T = 125 C - 8.5 - J V = 200 V R T = 25 C - 68 - J Reverse recovery charge Q nC rr T = 125 C - 265 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.470.80 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 40 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth and greased - 0.4 - thCS case to heatsink -6.0 - g Weight -0.22 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 3L 80CPH03 Revision: 27-Nov-2018 Document Number: 93270 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000