Product Information

LSR102 L0

LSR102 L0 electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers MELF 20V 1A Schottky Rectifier

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4850: USD 0.1415 ea
Line Total: USD 686.28

0 - Global Stock
MOQ: 4850  Multiples: 4850
Pack Size: 4850
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 4850
Multiples : 4850

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LSR102 L0
Taiwan Semiconductor

4850 : USD 0.1415

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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LSR102 thru LSR106 Taiwan Semiconductor CREAT BY ART Small Signal Product Surface Mount Schottky Barrier Rectifiers FEATURES - Plastic package has carries underwriters - Ideal for automated placement - Surge overload rating to 25 Ampers peak - Reliable low cost construction utilizing molded plastic technique results in in-expensive product - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Terminal : Pure tin plated,lead free MELF - Weight : 0.12 grams MECHANICAL DATA - Polarity: Indicated by blue cathode band MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL LSR102 LSR103 LSR104 LSR105 LSR106 UNIT Maximum repetitive peak reverse voltage V 20 30 40 50 60 V RRM Maximum RMS voltage V 14 21 28 35 42 V RMS Maximum DC blocking voltage V 20 30 40 50 60 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 25 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 0.55 0.70 V F 1 A o 1 Maximum reverse current rated VR T =25 C J I mA R o T =125 C 10 J Typical junction capacitance (Note 2) 110 80 Cj pF O Typical thermal resistance R 80 JA C/W O Operating junction temperature range T -65 to +125 -65 to +150 J C O Storage temperature range T - 65 to +150 STG C Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS S1412011 Version: G14LSR102 thru LSR106 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig.2 Maximum Non-Repetitive Forward Fig.1 Maximum Forward Current Derating Curve Surge Current 50 1. 5 40 LSR105 - LSR106 1 30 20 LSR102 - LSR104 0. 5 10 0 0 1 10 100 0 25 50 75 100 125 150 175 O Number of Cycles at 60H Lead Temperature ( C) Z Fig.3 Typical Forward Characteristics Fig.4 Typical Reverse Characteristics 100 100 10 O Tj=125 C LSR102 - LSR104 10 1 O Tj=75 C LSR105 - LSR106 0. 1 1 O Tj=25 C 0. 01 0. 1 0. 001 0. 1 0. 3 0. 5 0. 7 0. 9 1. 1 1. 3 1. 5 1. 7 1. 9 2. 1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig.5 Typical Junction Capacitance Fig.6 Typical Transient Thermal Characteristics 1000 100 10 LSR102 - LSR104 100 LSR105 - LSR106 1 0. 1 10 0. 01 0. 1 1 10 100 0. 1 1 10 100 T, Pulse Duration (sec) Reverse Voltage (V) Document Number: DS S1412011 Version: G14 Instantaneous Forward Current (A) Average Forward Current (A) Junction Caoacitance (pF) Peak Forward Surge O Transient Termal Impedance ( C/W) Instantaneous Reverse Current

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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