Product Information

MBR10100

MBR10100 electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 10A 100V

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.134 ea
Line Total: USD 1.13

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

MBR10100
Taiwan Semiconductor

1 : USD 1.2247
10 : USD 1.0647
50 : USD 0.9255
100 : USD 0.8272
250 : USD 0.7248
500 : USD 0.6405

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Factory Pack Quantity :
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MBR1060 SWITCHMODE Power Rectifiers Features GuardRing for Stress Protection MBR1060 MAXIMUM RATINGS Rating Symbol MBR1060 Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Rated V ) T = 133C I 10 A R C F(AV) Peak Repetitive Forward Current I 20 A FRM (Rated V , Square Wave, 20 kHz) T = 133C R C Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 0.5 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Maximum Thermal Resistance, JunctiontoCase R 2.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient R 60 C/W JA ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 125C) 0.7 F C (i = 10 Amps, T = 25C) 0.8 F C (i = 20 Amps, T = 125C) 0.85 F C (i = 20 Amps, T = 25C) 0.95 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 22 C (Rated dc Voltage, T = 25C) 0.10 C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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