Product Information

MBR1045

MBR1045 electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 10A 45V

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9522 ea
Line Total: USD 0.95

1113 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1083 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

MBR1045
Taiwan Semiconductor

1 : USD 0.9522
10 : USD 0.7774
100 : USD 0.6118
500 : USD 0.5244
1000 : USD 0.4612
2000 : USD 0.4025
10000 : USD 0.3864
24000 : USD 0.3818

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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MBR1035 MBR10200 Taiwan Semiconductor 10A, 35V - 200V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 10 A F Guard ring for overvoltage protection V 35 - 200 V RRM High surge current capability RoHS Compliant I 150 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package TO-220AC APPLICATIONS Configuration Single die Switching mode power supply (SMPS) Adapters DC to DC converters MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AC ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL UNIT 1035 1045 1050 1060 1090 10100 10150 10200 Marking code on the MBR MBR MBR MBR MBR MBR MBR MBR device 1035 1045 1050 1060 1090 10100 10150 10200 Repetitive peak reverse V 35 45 50 60 90 100 150 200 V RRM voltage Reverse voltage, total rms V 24 31 35 42 63 70 105 140 V R(RMS) value Forward current I 10 A F Surge peak forward current 8.3ms single half sine I 150 A FSM wave superimposed on rated load Peak repetitive forward current I 20 A FRM (Rated V , Square Wave, R 20KHz) Peak repetitive reverse I 1 0.5 A (1) RRM surge current Voltage rate of change dV/dt 10,000 V/s (Rated V ) R 1 Version: M2103 MBR1035 MBR10200 Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL UNIT 1035 1045 1050 1060 1090 10100 10150 10200 Junction temperature T -55 to +150 C J Storage temperature T -55 to +175 C STG Notes: 1. tp = 2.0s, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case resistance R 3 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT MBR1035 - 0.70 V MBR1045 MBR1050 - 0.80 V MBR1060 I = 10A, T = 25C F J MBR1090 - 0.85 V MBR10100 MBR10150 - 1.05 V MBR10200 (1) Forward voltage V F MBR1035 - 0.57 V MBR1045 MBR1050 - 0.70 V MBR1060 I = 10A, T = 125C F J MBR1090 - 0.71 V MBR10100 MBR10150 - - V MBR10200 MBR1035 MBR1045 MBR1050 MBR1060 T = 25C - 100 A J MBR1090 MBR10100 MBR10150 (2) Reverse current rated V MBR1035 I R R - 15 mA MBR1045 MBR1050 - 10 mA MBR1060 T = 125C J MBR1090 MBR10100 - 6 mA MBR10150 MBR10200 Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: M2103

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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