X-On Electronics has gained recognition as a prominent supplier of MBR1045 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR1045 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBR1045 Taiwan Semiconductor

MBR1045 electronic component of Taiwan Semiconductor
MBR1045 Taiwan Semiconductor
MBR1045 Schottky Diodes & Rectifiers
MBR1045  Semiconductors

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See Product Specifications
Part No. MBR1045
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10A 45V
Datasheet: MBR1045 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.94 ea
Line Total: USD 0.94 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 11 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 1.1907
10 : USD 0.991
100 : USD 0.6847
500 : USD 0.5725
1000 : USD 0.5142
5000 : USD 0.478

0
Ship by Mon. 09 Jun to Wed. 11 Jun
MOQ : 1
Multiples : 1
1 : USD 0.94
10 : USD 0.78
100 : USD 0.506
500 : USD 0.4356
1000 : USD 0.3806
2500 : USD 0.3443
5000 : USD 0.3355
10000 : USD 0.3245
25000 : USD 0.3223

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the MBR1045 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR1045 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR1035 MBR10200 Taiwan Semiconductor 10A, 35V - 200V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 10 A F Guard ring for overvoltage protection V 35 - 200 V RRM High surge current capability RoHS Compliant I 150 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package TO-220AC APPLICATIONS Configuration Single die Switching mode power supply (SMPS) Adapters DC to DC converters MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AC ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL UNIT 1035 1045 1050 1060 1090 10100 10150 10200 Marking code on the MBR MBR MBR MBR MBR MBR MBR MBR device 1035 1045 1050 1060 1090 10100 10150 10200 Repetitive peak reverse V 35 45 50 60 90 100 150 200 V RRM voltage Reverse voltage, total rms V 24 31 35 42 63 70 105 140 V R(RMS) value Forward current I 10 A F Surge peak forward current 8.3ms single half sine I 150 A FSM wave superimposed on rated load Peak repetitive forward current I 20 A FRM (Rated V , Square Wave, R 20KHz) Peak repetitive reverse I 1 0.5 A (1) RRM surge current Voltage rate of change dV/dt 10,000 V/s (Rated V ) R 1 Version: M2103 MBR1035 MBR10200 Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL UNIT 1035 1045 1050 1060 1090 10100 10150 10200 Junction temperature T -55 to +150 C J Storage temperature T -55 to +175 C STG Notes: 1. tp = 2.0s, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case resistance R 3 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT MBR1035 - 0.70 V MBR1045 MBR1050 - 0.80 V MBR1060 I = 10A, T = 25C F J MBR1090 - 0.85 V MBR10100 MBR10150 - 1.05 V MBR10200 (1) Forward voltage V F MBR1035 - 0.57 V MBR1045 MBR1050 - 0.70 V MBR1060 I = 10A, T = 125C F J MBR1090 - 0.71 V MBR10100 MBR10150 - - V MBR10200 MBR1035 MBR1045 MBR1050 MBR1060 T = 25C - 100 A J MBR1090 MBR10100 MBR10150 (2) Reverse current rated V MBR1035 I R R - 15 mA MBR1045 MBR1050 - 10 mA MBR1060 T = 125C J MBR1090 MBR10100 - 6 mA MBR10150 MBR10200 Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: M2103

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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