Product Information

MBR20200CT

MBR20200CT electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 20A 200V

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3455 ea
Line Total: USD 1.35

1931 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1931 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

MBR20200CT
Taiwan Semiconductor

1 : USD 1.3455
10 : USD 1.1075
100 : USD 0.874
500 : USD 0.7624
1000 : USD 0.6199
2500 : USD 0.6107
4000 : USD 0.5819
12000 : USD 0.5577
28000 : USD 0.5577

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Factory Pack Quantity :
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MBR20200CT SWITCHMODE Power Rectifier Dual Schottky Rectifier Features and Benefits MBR20200CT MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (T = 161C) Per Leg I 10 A C F(AV) Per Package 20 Peak Repetitive Forward Current per Leg I 20 A FRM (Square Wave, 20 kHz, T = 158C) C NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 65 to +175 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Condition Symbol Value Unit Maximum Thermal Resistance, Minimum Pad R 2.0 C/W JC Junction toCase Maximum Thermal Resistance, Minimum Pad R 60.0 C/W JA Junction toAmbient ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Min Typical Max Unit Maximum Instantaneous Forward Voltage (Note 1) V V F (I = 10 A, T = 25C) 0.80 0.90 F J (I = 10 A, T = 125C) 0.66 0.80 F J (I = 20 A, T = 25C) 0.89 1.00 F J (I = 20 A, T = 125C) 0.76 0.90 F J Maximum Instantaneous Reverse Current (Note 1) I mA R (Rated dc Voltage, T = 25C) 0.0002 1.0 J (Rated dc Voltage, T = 125C) 0.4 50 J DYNAMIC CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Capacitance (V = 5.0 V, T = 25C, Frequency = 1.0 MHz) C 500 pF R C T 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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