MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G SWITCHMODE MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G AYWW AYWW B20H100G AYWW B20H100G AKA B20H100G AKA AKA 2 TO220AB ISOLATED TO220 D PAK A = Assembly Location Y = Year WW = Work Week B20H100 = Device Code G = PbFree Device AKA = Polarity Designator Figure 1. Marking Diagrams MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 162C 10 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 160C 20 R C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 250 Operating Junction Temperature (Note 1) T +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 11 and 12) W 200 mJ AVAL ESD Ratings: V > 400 Machine Model = C > 8000 Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBR20H100CTG, MBRB20H100CTG and NRVBB20H100CTT4G) Junction toCase R 2.0 JC Junction toAmbient 60 R JA (MBRF20H100CTG) Junction toCase 2.5 R JC