Product Information

MBR2545CT

MBR2545CT electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 30A 45V

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.84 ea
Line Total: USD 1.84

233 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
233 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

MBR2545CT
Taiwan Semiconductor

1 : USD 1.84
10 : USD 1.5295
100 : USD 1.242
500 : USD 1.073
1000 : USD 0.9303
2000 : USD 0.8843
4000 : USD 0.8602
12000 : USD 0.8326
28000 : USD 0.8245

46 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

MBR2545CT
Taiwan Semiconductor

1 : USD 1.651
5 : USD 1.482
15 : USD 1.144
40 : USD 1.079
500 : USD 1.04

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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MBR2545CT - MBR2560CT Green 30A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits Schottky Barrier Chip V (MAX) (V) I (mA) F R(MAX) V (V) I (A) RRM O +25C +25C Guard Ring Die Construction for Transient Protection 45 15 - 0.2 Low Power Loss, High Efficiency 45 30 0.82 0.2 High Surge Capability 60 15 0.75 1.0 60 30 - 1.0 High Current Capability and Low Forward Voltage Drop For Use in Low-Voltage, High-Frequency Inverters, Free- Wheeling, and Polarity Protection Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2 ) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications The MBR2545CT & MBR2560CT are designed to meet the stringent Case: TO-220AB requirements of commercial applications, such as: Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Polarity Protection Diodes Moisture Sensitivity: Level 1 per J-STD-020 Re-Circulating Diodes Terminals: Finish Bright Tin. Switching Diodes Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Marking: Type Number Weight: 2.24 grams (Approximate) Pin 1 Pin 2 Case Pin 3 TO-220AB TO-220AB Package Pin Out Top View Bottom Configuration View Ordering Information (Note 4) Part Number Case Packaging MBR2545CT TO-220AB 50/Tube MBR2560CT TO-220AB 50/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See MBR2545CT - MBR2560CT Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol MBR2545CT MBR2560CT Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 45 60 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 32 42 V R(RMS) Average Rectified Output Current T = +130C I 30 A C O Non-Repetitive Peak Forward Surge Current 8.3ms I 150 A FSM Single Half Sine-Wave Superimposed on Rated Load Peak Repetitive Reverse Surge Current (Note 7) 1.0 0.5 A I RRM Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) 1.5 C/W R JC Operating and Storage Temperature Range -65 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit Forward Voltage Drop I = 15.0A, T = +25C F C 0.75 0.65 I = 15.0A, T = +125C F C V V FM I = 30.0A, T = +25C 0.82 F C 0.73 I = 30.0A, T = +125C F C Peak Reverse Current T = +25C C 0.2 1.0 mA I RM 40 50 at Rated DC Blocking Voltage T = +125C C Typical Total Capacitance (Note 6) 750 500 pF C T Notes: 5. Thermal resistance junction to case mounted on heatsink. 6. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element. 7. 2.0s pulse width, f = 1.0KHz. 30 50 T = 25 C J I Pulse Width = 300s F 24 10 T = 150C J T = 25C J 18 1.0 12 0.1 MBR2545CT 6 MBR2560CT 0 0.01 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1.0 T , CASE TEMPERATURE (C) C V , INSTANTANEOUS FORWARD VOLTAGE (V) F Fig. 1 Forward Derating Curve Fig. 2 Typical Forward Characteristics 2 of 4 MBR2545CT - MBR2560CT August 2015 Diodes Incorporated www.diodes.com Document number: DS31036 Rev. 7 - 2 I , AVERAGE RECTIFIED CURRENT (A) (AV) I , INSTANTANEOUS FORWARD CURRENT (A) F

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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