MBR2560CT Taiwan Semiconductor

MBR2560CT electronic component of Taiwan Semiconductor
MBR2560CT Taiwan Semiconductor
MBR2560CT Schottky Diodes & Rectifiers
MBR2560CT  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MBR2560CT Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR2560CT Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. MBR2560CT
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30A 60V
Datasheet: MBR2560CT Datasheet (PDF)
Price (USD)
1: USD 1.722 ea
Line Total: USD 1.72 
Availability : 21
  
Ship by Mon. 25 Aug to Wed. 27 Aug
QtyUnit Price
1$ 1.722
3$ 1.582
10$ 1.302
16$ 1.204
44$ 1.134
250$ 1.092

Availability 21
Ship by Mon. 25 Aug to Wed. 27 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.722
3$ 1.582
10$ 1.302
16$ 1.204
44$ 1.134
250$ 1.092

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Technology
Series
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the MBR2560CT from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR2560CT and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR2535CT thru MBR25150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - halogen-free Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 2535 2545 2550 2560 2590 25100 25150 UNIT CT CT CT CT CT CT CT Maximum repetitive peak reverse voltage V 35 45 50 60 90 100 150 V RRM Maximum RMS voltage V 24 31 35 42 63 70 105 V RMS Maximum DC blocking voltage V 35 45 50 60 90 100 150 V DC Maximum average forward rectified current I 25 A F(AV) Peak repetitive forward current I 25 A FRM (Rated VR, square wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Peak repetitive reverse surge current (Note 1) I 1 0.5 A RRM Maximum instantaneous forward voltage (Note 2) I =12.5A, T =25 - 0.75 0.85 0.95 F J I =12.5A, T =125 V F J -0.65 0.75 0.92 V F I =25A, T =25 F J 0.82 -0.92 1.02 I =25A, T =125 F J 0.73 - 0.88 0.98 0.2 0.2 0.1 0.1 Maximum reverse current rated VR T =25 J I mA R T =125 J 15 10 7.5 5 Voltage rate of change (Rated V ) dV/dt 10000 V/s R O Typical thermal resistance R 1.0 JC C/W O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS D1308065 Version: I13MBR2535CT thru MBR25150CT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 GREEN COMPOUND PACKING CODE PACKAGE PACKING PART NO. QUALIFIED CODE MBR25xxCT Prefix C0 Suffix TO-220AB 50 / Tube (Note 1) Note 1:x defines voltage from 35V (MBR2535CT) to 150V (MBR25150CT) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED CODE MBR2560CT C0 C0 MBR2560CT MBR2560CT C0G MBR2560CT C0 G Green compound MBR2560CTHC0 H C0 AEC-Q101 qualified MBR2560CT RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD FIG.1- FORWARD CURRENT DERATING CURVE SURGE CURRENT PER LEG 30 250 8.3ms Single Half Sine Wave 25 JEDEC Method 225 20 200 15 175 10 150 RESISTIVE OR INDUCTIVELOAD 5 125 WITH HEATSINK 0 100 0 50 100 150 1 10 100 o CASE TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 3- TYPICAL INSTATANEOUS FORWARD FIG. 4- TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS PER LEG PER LEG 100 100 10 10 TJ=125 TJ=125 1 1 TJ=25 TJ=25 0. 1 Pulse Width=300s 1% Duty Cycle 0. 1 0. 01 MBR2535CT-MBR2545CT MBR2535CT-MBR2545CT MBR2550CT-MBR2560CT MBR2550CT-MBR25150CT MBR2590CT-MBR25150CT 0. 001 0. 01 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1308065 Version: I13 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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