MBR3035CT MBR30150CT Taiwan Semiconductor 30A, 35V - 150V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 30 A F Guard ring for overvoltage protection V 35 - 150 V RRM High surge current capability RoHS Compliant I 200 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package TO-220AB APPLICATIONS Configuration Dual dies Switching mode power supply (SMPS) Adapters DC to DC converters MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.90g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 3035 3045 3050 3060 3090 30100 30150 UNIT CT CT CT CT CT CT CT MBR MBR MBR MBR MBR MBR MBR Marking code on the device 3035 3045 3050 3060 3090 30100 30150 CT CT CT CT CT CT CT Repetitive peak reverse voltage V 35 45 50 60 90 100 150 V RRM Reverse voltage, total rms value V 24 31 35 42 63 70 105 V R(RMS) Forward current I 30 A F Surge peak forward current, 8.3ms single half sine wave I 200 A FSM superimposed on rated load Peak repetitive reverse I 1 0.5 A (1) RRM surge current Peak repetitive forward current I 30 A FRM (Rated V , Square wave, 20KHz) R Critical rate of rise of off-state dv/dt 10,000 V/s voltage Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG Notes: 1. tp = 2.0s, 1.0KHz 1 Version: K2104 MBR3035CT MBR30150CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT MBR3035CT MBR3045CT Junction-to-case thermal resistance R 1.0 C/W JC MBR3050CT MBR3060CT MBR3090CT Junction-to-case thermal resistance MBR30100CT R 1.5 C/W JC MBR30150CT ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT MBR3035CT - 0.70 V MBR3045CT MBR3050CT - 0.77 V MBR3060CT I = 15A, T = 25C F J MBR3090CT - 0.84 V MBR30100CT MBR30150CT - 0.95 V MBR3035CT - 0.82 V MBR3045CT MBR3050CT - - V MBR3060CT I = 30A, T = 25C F J MBR3090CT - 0.94 V MBR30100CT MBR30150CT - 1.02 V Forward voltage per V (1) F diode MBR3035CT - 0.60 V MBR3045CT MBR3050CT - 0.67 V MBR3060CT I = 15A, T = 125C F J MBR3090CT - 0.70 V MBR30100CT MBR30150CT - 0.92 V MBR3035CT - 0.73 V MBR3045CT MBR3050CT - - V MBR3060CT I = 30A, T = 125C F J MBR3090CT - 0.82 V MBR30100CT MBR30150CT - 0.98 V MBR3035CT MBR3045CT MBR3050CT - 200 A MBR3060CT T = 25C J MBR3090CT MBR30100CT MBR30150CT - 100 A Reverse current (2) I R MBR3035CT rated V per diode R - 15 mA MBR3045CT MBR3050CT - 10 mA MBR3060CT T = 125C J MBR3090CT - 7.5 mA MBR30100CT MBR30150CT - 5 mA 2 Version: K2104