Product Information

MBR3045CT

MBR3045CT electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 30 Amp 45 Volt Common Cathode

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7811 ea
Line Total: USD 2.78

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

MBR3045CT
Taiwan Semiconductor

1 : USD 2.7811
10 : USD 2.4161
100 : USD 1.9492
500 : USD 1.5435
1000 : USD 1.5199
5000 : USD 1.4884

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

MBR3045CT
Taiwan Semiconductor

1 : USD 1.4605
10 : USD 1.242
100 : USD 1.0189
500 : USD 0.8867
1000 : USD 0.7648
2500 : USD 0.7578
4000 : USD 0.7521
12000 : USD 0.7268
28000 : USD 0.7096

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Operating Temperature Range
Type
Width
Brand
Factory Pack Quantity :
LoadingGif

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VS-MBR3045CTPbF, VS-MBR3045CT-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance 13Common TO-220AB Guard ring for enhanced ruggedness and long cathode term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AB Halogen-free according to IEC 61249-2-21 definition (-N3 only) I 2 x 15 A F(AV) V 45 V R DESCRIPTION V at I See Electrical table F F This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier I max. 100 mA at 125 C RM technology allows for reliable operation up to 150 C T max. 150 C J junction temperature. Typical applications are in switching Diode variation Common cathode power supplies, converters, freewheeling diodes, and reverse battery protection. E 10 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform (per device) 30 A F(AV) V 35/45 V RRM I T = 123 C (per leg) 30 FRM C A I t = 5 s sine 1020 FSM p V 20 A , T = 125 C 0.6 V F pk J T Range - 65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBR3045CTPbF VS-MBR3045CT-N3 UNITS Maximum DC reverse voltage V R 45 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 15 Maximum average I T = 123 C, rated V F(AV) C R forward current per device 30 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 123 C 30 FRM R C Following any rated load A 5 s sine or 3 s rect. pulse condition and with rated 1020 V applied RRM Non-repetitive peak surge current I FSM Surge applied at rated load conditions halfwave, 200 single phase, 60 Hz Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 5 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 26-Aug-11 Document Number: 94292 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR3045CTPbF, VS-MBR3045CT-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 30 A T = 25 C 0.76 J (1) Maximum forward voltage drop V 20 A 0.6 V FM T = 125 C J 30 A 0.72 T = 25 C 1 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 100 J Threshold voltage V 0.29 V F(TO) T = T maximum J J Forward slope resistance r 13.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 800 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T - 65 to 150 J C Maximum storage temperature range T - 65 to 175 Stg Maximum thermal resistance, R DC operation 1.5 thJC junction to case per leg Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink Only for TO-220 Maximum thermal resistance, DC operation R 50 thJA 2 For D PAK and TO-262 junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style TO-220AB MBR3045CT Revision: 26-Aug-11 Document Number: 94292 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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