Product Information

P4SMA51CAR2

P4SMA51CAR2 electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 400W, 51V, 5%, Bidirectional, TVS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7500: USD 0.114 ea
Line Total: USD 855

0 - Global Stock
MOQ: 7500  Multiples: 7500
Pack Size: 7500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 7500
Multiples : 7500

Stock Image

P4SMA51CAR2
Taiwan Semiconductor

7500 : USD 0.114

     
Manufacturer
Product Category
Polarity
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Length
Operating Temperature Range
Width
Brand
Mounting Style
Pd - Power Dissipation
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P4SMA SERIES Taiwan Semiconductor CREAT BY ART Suface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Typical IR less than 1A above 10V - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DO-214AC (SMA) MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Peak power dissipation at T =25, tp=1ms(Note 1) P 400 Watts A PK Peak forward surge current, 8.3 ms single half sine-wave I 40 A FSM superimposed on rated load Maximum instantaneous forward voltage at 25 A for V 3.5 Volts F Unidirectional only O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types P4SMA6.8 through Types P4SMA200A 2. Electrical Characterstics Apply in Both Directions ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R3 SMA 1,800 / 7" Plastic reel R2 SMA 7,500 / 13" Paper reel M2 SMA 7,500 / 13" Plastic reel P4SMAxxxx Prefix Suffix (Note 1) F3 Folded SMA 1,800 / 7" Plastic reel F2 Folded SMA 7,500 / 13" Paper reel F4 Folded SMA 7,500 / 13" Plastic reel Note 1:xxx defines voltage from 6.8V (P4SMA6.8) to 200V (P4SMA200A) EXAMPLE AEC-Q101 GREEN PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED COMPOUND P4SMA200A R3 R3 P4SMA200A P4SMA200A R3G R3 G Green compound P4SMA200A P4SMA200AHR3 HR3 AEC-Q101 qualified P4SMA200A Document Number: DS_D1405054 Version: K14P4SMA SERIES Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 10 75 50 1 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) A tp, PULSE WIDTH, (us) FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 50 140 as the POINT WHERE the PEAK tr=10s CURRENT DECAYS to 50% OF IPPM 8.3ms Single Half Sine Wave 120 Peak Value 40 IPPM 100 Half Value-IPPM/2 30 80 10/1000s, WAVEFORM as DEFINED by R.E.A. 60 20 40 10 20 td 0 0 0 0.511.522.533.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 100000 10000 VR=0 1000 MEASURED at STAND-OFF 100 VOLTAGE,Vwm f=1.0MHz Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Document Number: DS_D1405054 Version: K14 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP DERATING IN PERCENTAGE (%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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