RB751V-40WS RRG Taiwan Semiconductor

RB751V-40WS Taiwan Semiconductor Low V SMD Schottky Barrier Diode F FEATURES KEY PARAMETERS Low power loss, high current capability, low V F PARAMETER VALUE UNIT Surface mount device type P 200 mW D Moisture sensitivity level: level 1, per J-STD-020 V 40 V RRM RoHS Compliant V at I = 1mA 0.37 V Halogen-free according to IEC 61249-2-21 F F T 125 C J MAX APPLICATIONS Package SOD-323F Switching mode power supply (SMPS) Configuration Single die Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOD-323F Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 4.60mg (approximately) SOD-323F ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL RB751V-40WS UNIT Marking code on the device S8 Power Dissipation P 200 mW D Repetitive Peak Reverse Voltage V 40 V RRM Reverse Voltage V 30 V R Mean Forward Current I 30 mA O Non-repetitive peak forward surge current 60Hz for 1 Cyc. I 0.2 A FSM Junction temperature range T -40 to +125 C J Storage temperature range T -40 to +125 C STG 1 Version: D2007 RB751V-40WS Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 500 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) Forward Voltage I = 1mA V - 0.37 V F F (2) Reverse current rated V V = 30V I - 0.5 A R R R Junction capacitance 1MHz, V = 1V C 2 - pF R J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING RB751V-40WS RR SOD-323F 3K / 7 Reel RB751V-40WS RRG SOD-323F 3K / 7 Reel RB751V-40WS R9 SOD-323F 10K / 13 Reel RB751V-40WS R9G SOD-323F 10K / 13 Reel Notes: 1. means green compound (halogen free) 2 Version: D2007