X-On Electronics has gained recognition as a prominent supplier of S1DL R3 rectifiers across the USA, India, Europe, Australia, and various other global locations. S1DL R3 rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for rectifiers, ensuring timely deliveries around the world.

S1DL R3 Taiwan Semiconductor

S1DL R3 electronic component of Taiwan Semiconductor
Images are for reference only
See Product Specifications
Part No.S1DL R3
Manufacturer: Taiwan Semiconductor
Category:Rectifiers
Description: Rectifiers 1A, 200V, GLASS PASSIVATED SMF RECTIFIER
Datasheet: S1DL R3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3600: USD 0.0719 ea
Line Total: USD 258.84

Availability - 0
MOQ: 3600  Multiples: 3600
Pack Size: 3600
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 3600
Multiples : 3600
3600 : USD 0.0793
9000 : USD 0.0625
23400 : USD 0.06
48600 : USD 0.0562

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the S1DL R3 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S1DL R3 and other electronic components in the Rectifiers category and beyond.

S1AL - S1ML Taiwan Semiconductor CREAT BY ART 1A, 50V - 1000V Surface Mount Rectifier FEATURES - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition Sub SMA MECHANICAL DATA Case: Sub SMA Molding compound, UL flammability classification rating 94V-0 Part No. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.019 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL S1AL S1BL S1DL S1GL S1JL S1KL S1ML UNIT Marking code 1AL 1BL 1DL 1GL 1JL 1KL 1ML Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.1 V F 1 A T =25C 5 J Maximum reverse current rated V I A R R T =125C 50 J Typical junction capacitance (Note 2) C 9 pF J Typical reverse recovery time (Note 3) t 1.8 s rr R JL 25 30 Typical thermal resistance C/W R 85 85 JA Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Measured at 1 MHz and Applied VR=4.0 Volts. Note 3: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Document Number: DS D1410010 Version: O15S1AL - S1ML Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING CODE PACKING CODE PACKAGE PACKING SUFFIX SUFFIX RU Sub SMA 1,800 / 7 Plastic reel (8mm tape) RV Sub SMA 3,000 / 7 Plastic reel (8mm tape) RT Sub SMA 7,500 / 13 Paper reel (8mm tape) MT Sub SMA 7,500 / 13 Plastic reel (8mm tape) RQ Sub SMA 10,000 / 13 Paper reel (8mm tape) MQ Sub SMA 10,000 / 13 Plastic reel (8mm tape) S1xL H G (Note 1) R3 Sub SMA 1,800 / 7 Plastic reel (12mm tape) RF Sub SMA 3,000 / 7 Plastic reel (12mm tape) R2 Sub SMA 7,500 / 13 Paper reel (12mm tape) M2 Sub SMA 7,500 / 13 Plastic reel (12mm tape) RH Sub SMA 10,000 / 13 Paper reel (12mm tape) MH Sub SMA 10,000 / 13 Plastic reel (12mm tape) Note 1: defines voltage from 50V (S1AL) to 1000V (S1ML) EXAMPLE PREFERRED PART NO. PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified S1MLHRUG S1ML H RU G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING 100 CURVE 1.2 10 1 T =125C J 0.8 1 T =75C J 0.6 0. 1 0.4 0. 01 T =25C 0.2 J 0 0. 001 0 25 50 75 100 12 5 150 17 5 0 20 40 60 80 100 120 140 LEAD TEMPERATURE (C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3- MAXIMUM NON-REPETITIVE FORWARD FIG. 4- TYPICAL INSTANTANEOUS FORWARD SURGE CURRENT CHARACTERISTICS 100 100 10 1 10 0. 1 8.3ms Single Half Sine Wave 0. 01 1 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 1 10 100 FORWARD VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz Document Number: DS D1410010 Version: O15 PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT (A) (A) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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