Product Information

S4K R6

S4K R6 electronic component of Taiwan Semiconductor

Datasheet
Diode Switching 800V 4A 2-Pin SMC T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1253 ea
Line Total: USD 375.9

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

S4K R6
Taiwan Semiconductor

3000 : USD 0.1253

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temperature Classification
Operating Temp Range
Rev Recov Time
Peak Non-Repetitive Surge Current
Peak Rep Rev Volt
Rev Curr
Avg Forward Curr Max
Package Type
Rad Hardened
Pin Count
Rectifier Type
LoadingGif

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CREAT BY ART S4A - S4M 4.0 AMPS. Surface Mount Rectifiers SMC/DO-214AB RoHRoHSS Pb COCOMMPPLILIANANCCEE Features For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 High temperature soldering: 260 /10 seconds at terminals Green compound with suffix on packing code & prefix on datecode. Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free. S4X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packaging: 16mm tape per EIA STD RS-481 Y = Year Weight: 0.21 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol S4A S4B S4D S4G S4J S4K S4M Units Type Number Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 4 A F(AV) @T =75 L Peak Forward Surge Current, 8.3 ms Single Half Sine- I 100 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.15 V F @ 4 A Maximum DC Reverse Current @ T =25 A 10 uA I R 250 uA at Rated DC Blocking Voltage @ T =125 A Typical Reverse Recovery Time (Note 2) Trr 1.5 uS Typical Junction Capacitance (Note 3) Cj 60 pF R JL 13 O Typical Thermal Resistance C/W R 47 JA O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 C STG Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A 3. Measured at 1 MHz and Applied V R=4.0 Volts Version:E11RATINGS AND CHARACTERISTIC CURVES (S4A THRU S4M) FIG.2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING 100 CURVE 4.5 4.0 3.5 TA=125 3.0 2.5 10 2.0 1.5 1.0 RESISTIVE OR INDUCTIVE LOAD 0.5 0.0 50 60 70 80 90 100 110 120 130 140 150 160 1 o LEAD TEMPERATURE. ( C) TA=25 0.1 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0 20 40 60 80 100 120 140 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 8.3ms Single Half Sine Wave JEDEC Method 10 1 10 100 FIG.5- TYPICAL FORWARD CHARACTERISRICS NUMBER OF CYCLES AT 60 Hz 100 10 FIG.4- TYPICAL JUNCTION CAPACITANCE 100 1 TA=25 10 f=1.0MHz Vsig=50mVp-p 0.1 TA=25 PULSE WIDTH-300us 1% DUTY CYCLE 0.01 1 1 10 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 REVERSE VOLTAGE. (V) FORWARD VOLTAGE (V) Version:E11 PEAK FORWARD SURGE AVERAGE FORWARD JUNCTION CAPACITANCE.(pF) CURRENT. (A) CURRENT.(A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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