SD103AW RHG Taiwan Semiconductor

SD103AW - SD103CW Taiwan Semiconductor Small Signal Product Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface device type mounting - Moisture sensitivity level (MSL): 1 - Matte Tin (Sn) lead finish with Nickel (Ni) under plate - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 SOD-123 MECHANICAL DATA - Case: SOD-123 small outline plastic package - Molding compound, UL flammability classification rating 94V-0 - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL SD103AW SD103BW SD103CW UNIT Power Dissipation P 400 mW D Repetitive Peak Reverse Voltage V 40 30 20 V RRM Reverse Voltage V 28 21 14 V R Mean Forward Current T = 100C I 350 mA L O Repetitive Peak Forward Surge Current t 1.0 s I 1.5 A FRM Thermal Resistance ( Junction to Ambient ) R 300 C/W JA Junction Temperature T 125 C J T Storage Temperature Range -65 to +125 C STG PARAMETER SYMBOL MIN TYP MAX Units SD103AW I = 10 A 40 R Reverse Breakdown Voltage SD103BW I = 10 A V 30 - - V R (BR) SD103CW I = 10 A 20 R I = 20 mA 0.37 F V Forward Voltage - V F - I = 200 mA 0.60 F SD103AW V = 30 V R Reverse Leakage Current SD103BW V = 20 V I - - 5 A R R SD103CW V = 10 V R V = 0 , f = 1.0 MHz C 50 Junction Capacitance R pF J Version: D1601SD103AW - SD103CW Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25 unless otherwise noted) A Fig. 1 Typical Forward Characteristics Fig. 2 Forward Current Derating Curve 1000 0.42 0.35 100 0.28 10 0.21 1 0.14 Fig. 3 0.1 0.07 0.01 0 0.0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 Instantaneous Forward Voltage (V) Terminal Temperature ( C) Fig. 4 Fig. 3 Admissible Power Dissipation Fig. 4 Typical Junction Capacitance Fig. 3 100 450 400 350 300 250 10 200 150 100 50 0 1 0 25 50 75 100 125 150 0 10 20 30 40 Reverse Voltage (V) Ambient Temperature (C) Version: D1601 Instantaneous Forward Current (A) Power Dissipation (mW) Junction Capacitance (pF) I , Mean Forward Current (A) O