SK35B R4 Taiwan Semiconductor

SK32B - SK320B Taiwan Semiconductor 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Guard ring for over-voltage protection V 20 - 200 V RRM High surge current capability I 70 A Compliant to RoHS Directive 2011/65/EU and FSM in accordance to WEEE 2002/96/EC Package DO-214AA (SMB) Halogen-free according to IEC 61249-2-21 Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Part no. with suffix H means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test DO-214AA (SMB) Polarity: As marked Weight: 0.1 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SK SK SK SK SK SK SK SK SK PARAMETER SYMBOL UNIT 32B 33B 34B 35B 36B 39B 310B 315B 320B SK SK SK SK SK SK SK SK SK Marking code on the device 32B 33B 34B 35B 36B 39B 310B 315B 320B Repetitive peak reverse voltage V 20 30 40 50 60 90 100 150 200 V RRM Reverse voltage, total rms value V 14 21 28 35 42 63 70 105 140 V R(RMS) Maximum DC blocking voltage V 20 30 40 50 60 90 100 150 200 V DC Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed I 70 A FSM on rated load per diode Critical rate of rise of off-state voltage dV/dt 10000 V/s Junction temperature T - 55 to +125 - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:N1705 SK32B - SK320B Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance R 23 C/W JL Junction-to-ambient thermal resistance R 63 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT SK32B V SK33B - 0.50 V SK34B V SK35B V - 0.75 (1) SK36B V Forward voltage per diode I = 3A,T = 25C V F J F SK39B V - 0.85 SK310B V SK315B V - 0.95 SK320B V SK32B mA SK33B mA - 0.5 SK34B mA SK35B mA Reverse current rated V per R SK36B mA T = 25C I J R (2) diode SK39B mA SK310B mA - 0.1 SK315B mA SK320B mA SK32B mA - 10 SK33B mA SK34B mA SK35B mA Reverse current rated V per - 5 R SK36B T = 100C I mA J R (2) diode SK39B mA SK310B mA - - SK315B mA SK320B mA SK32B mA - - SK33B mA SK34B mA SK35B mA - - Reverse current rated V per R SK36B T = 125C I mA J R (2) diode SK39B mA SK310B mA - 2 SK315B mA SK320B mA Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:N1705