SMA6J11AHR3G Taiwan Semiconductor

Hot SMA6J11AHR3G electronic component of Taiwan Semiconductor
SMA6J11AHR3G Taiwan Semiconductor
SMA6J11AHR3G ESD Suppressors / TVS Diodes
SMA6J11AHR3G  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SMA6J11AHR3G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMA6J11AHR3G ESD Suppressors / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

Part No. SMA6J11AHR3G
Manufacturer: Taiwan Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 600W, 12.9V, 5%, Unidirectional, TVS
Datasheet: SMA6J11AHR3G Datasheet (PDF)
Price (USD)
1588: USD 0.172 ea
Line Total: USD 273.14 
Availability : 2813
  
Ship by Fri. 03 Oct to Thu. 09 Oct
QtyUnit Price
1588$ 0.172
1589$ 0.1719
1590$ 0.1717
1592$ 0.1716

Availability 2813
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1588
Multiples : 1
QtyUnit Price
1588$ 0.172
1589$ 0.1719
1590$ 0.1717
1592$ 0.1716


Availability 2056
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8978
10$ 0.672
100$ 0.5429
500$ 0.5417
1000$ 0.492
3600$ 0.3361
7200$ 0.3349
10800$ 0.3199
21600$ 0.3015

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SMA6J11AHR3G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMA6J11AHR3G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMA6J SERIES Taiwan Semiconductor CREAT BY ART 600W, 10V - 30V Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Excellent clamping capability - Fast response time: typically less than 1.0ps - 600 watts peak pulse power capability with a 10 / 1000 s waveform - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AC (SMA) - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER Value SYMBOL UNIT =25C, tp=1ms(Note 1) Peak power dissipation at T P 600 A W PK Steady state power dissipation P 4 W D Peak forward surge current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load 56 R JA Typcial thermal resistance C/W R JL 20 Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Non-repetitive current pulse per fig. 3 and derated above T =25C per fig. 2 A Document Number: DS D1502001 Version: D15SMA6J SERIES Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION PART NO. PACKING PACKING CODE PART NO. PACKAGE PACKING SUFFIX CODE SUFFIX R3 SMA 1,800 / 7 Plastic reel SMA6JxxA H R2 G SMA 7,500 / 13 Paper reel (Note 1, 2) M2 SMA 7,500 / 13 Plastic reel Note 1:x defines voltage from 10V (SMA6J10A) to 30V (SMA6J30A) Note 2: Whole series with green compound EXAMPLE PART NO. PACKING CODE EXAMPLE P/N PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified SMA6J10AHR3G SMAJ26A H R3 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE FIG. 1 PEAK PULSE POWER RATING CURVE CURRENT UNIDIRECTIONAL ONLY 100 50 Non-repetitive pulse wave from 8.3ms single half sine wave 40 shown in fig.3 10 30 20 1 10 0. 1 0 0. 1 1 10 100 1000 10000 1 10 100 tp, PULSE WIDTH, (s) NUMBER OF CYCLES AT 60 Hz FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 TYPICAL JUNCTION CAPACITANCE 10000 Pulse width(td) is defined 140 as the point where the peak current tr=10s decays to 50% of I PPM 120 Peak value I PPM 100 1000 Half value-I /2 PPM 80 10/1000s, waveform as defined by R.E.A. 60 100 40 f=1.0MHz Vsig=50mVp-p 20 10 td 0 1 10 100 0 0.5 11.5 22.5 33.5 4 V( ), BREAKDOWN VOLTAGE (V) BR t, TIME ms Document Number: DS D1502001 Version: D15 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW PPM IFSM, PEAK FORWARD SURGE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) A

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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