Product Information

SS14M RS

SS14M RS electronic component of Taiwan Semiconductor

Datasheet
Diode: Schottky rectifying; SMD; 40V; 1A; microSMA; Ufmax:0.55V

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3172 ea
Line Total: USD 1.59

649 - Global Stock
Ships to you between
Thu. 02 May to Wed. 08 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
324 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 5
Multiples : 5

Stock Image

SS14M RS
Taiwan Semiconductor

5 : USD 0.2938
25 : USD 0.2158
100 : USD 0.1651
270 : USD 0.156

     
Manufacturer
Product Category
Case
Mounting
Semiconductor Structure
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
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SS13M - SS16M Taiwan Semiconductor 1A, 30V - 60V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified PARAMETER VALUE UNIT Very low profile - typical height of 0.68mm I 1 A F(AV) Low power loss, high efficiency V 30 - 60 V RRM Ideal for automated placement I 25 A Moisture sensitivity level: level 1, per J-STD-020 FSM Compliant to RoHS Directive 2011/65/EU and T 150 C J MAX in accordance to WEEE 2002/96/EC Package Micro SMA Halogen-free according to IEC 61249-2-21 APPLICATIONS Converter Free wheeling LED lighting Adapters MECHANICAL DATA Case: Micro SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Micro SMA Weight: 0.006 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL SS13M SS14M SS16M UNIT Marking code on the device A B C Repetitive peak reverse voltage V 30 40 60 V RRM Forward current I 1 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed on I 25 A FSM rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version: N1810 SS13M - SS16M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP. UNIT Junction-to-lead Thermal Resistance R 30 C/W JL Junction-to-ambient thermal resistance R 125 C/W JA Junction-to-case thermal resistance R 40 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT 0.45 - I = 0.5A,T = 25C V F J 0.52 0.55 I = 1.0A,T = 25C V SS13M F J V F 0.35 - SS14M I = 0.5A,T = 125C V F J 0.46 0.50 I = 1.0A,T = 125C V F J (1) Forward voltage per diode 0.51 - I = 0.5A,T = 25C V F J 0.64 0.68 I = 1.0A,T = 25C V F J SS16M V F 0.46 - I = 0.5A,T = 125C V F J 0.57 0.60 I = 1.0A,T = 125C V F J 5 50 T = 25C A J SS13M 3 10 T = 125C I mA J R SS14M 5.3 - T = 150C mA Reverse current rated V J R (2) per diode 5 50 T = 25C A J 3 10 SS16M T = 125C I mA J R 6 - T = 150C mA J SS13M 50 - pF Junction capacitance SS14M 1 MHz, V =4.0V C R J 40 - pF SS16M Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING SS13MHRSG Micro SMA 3000 / 7 Plastic reel SS14MHRSG Micro SMA 3000 / 7 Plastic reel SS16MHRSG Micro SMA 3000 / 7 Plastic reel SS13M RSG Micro SMA 3000 / 7 Plastic reel SS14M RSG Micro SMA 3000 / 7 Plastic reel SS16M RSG Micro SMA 3000 / 7 Plastic reel Note: H means AEC-Q101 qualified 2 Version: N1810

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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