SS16 ON Semiconductor

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SS16T3G, SBRA8160T3G, www.onsemi.com SBRA8160NT3G These devices employ the Schottky Barrier principle in a large area SCHOTTKY BARRIER metaltosilicon power diode. State of the art geometry features RECTIFIER epitaxial construction with oxide passivation and metal overlay 1.0 AMPERES contact. Ideally suited for low voltage, high frequency rectification, or 60 VOLTS as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. Features Small Compact Surface Mountable Package with JBent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction SMA CASE 403D Very Low Forward Voltage Drop PLASTIC Guardring for Stress Protection SBRA8 Prefix for Automotive and Other Applications Requiring MARKING DIAGRAM Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS SS16 AYWW Compliant Mechanical Characteristics Case: Epoxy, Molded, Epoxy Meets UL 94 V0 SS16 = Specific Device Code Weight: 70 mg (approximately) A = Assembly Location** Y = Year Finish: All External Surfaces Corrosion Resistant and Terminal WW = Work Week Leads are Readily Solderable = PbFree Package Lead and Mounting Surface Temperature for Soldering Purposes: (Note: Microdot may be in either location) 260C Max. for 10 Seconds **The Assembly Location code (A) is front side Shipped in 12 mm tape, 5000 units per 13 inch reel optional. In cases where the Assembly Location is stamped in the package, the front side assembly code Polarity: Cathode Lead Indicated by Polarity Band may be blank. ESD Ratings: Machine Model = C ORDERING INFORMATION Human Body Model = 3B Device Package Shipping Device Meets MSL 1 Requirements SS16T3G SMA 5,000 / (PbFree) Tape & Reel SBRA8160T3G* SMA 5,000 / (PbFree) Tape & Reel SBRA8160NT3G* SMA 5,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: December, 2019 Rev. 9 SS16/DSS16T3G, SBRA8160T3G, SBRA8160NT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 105C) 1.0 R C NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40 Storage/Operating Case Temperature T , T 55 to +150 C stg C Operating Junction Temperature T 55 to +150 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Value Unit Characteristic Thermal Resistance, JunctiontoLead (Note 1) R 35 C/W JL Thermal Resistance, JunctiontoAmbient (Note 1) R 86 JA 1. Mounted on 2 in Square PC Board with 1 in Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Symbol Value Unit Characteristic V T = 25C V F J Maximum Instantaneous Forward Voltage (Note 2) 0.51 (I = 0.1 A) F 0.72 (I = 1.0 A) F I T = 25C T = 100C mA R J J Maximum Instantaneous Reverse Current (V = 60 V) 0.2 5.0 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2