SS22 - SS215
Taiwan Semiconductor
2A, 20V - 150V Surface Mount Schottky Barrier Rectifier
FEATURES
KEY PARAMETERS
Low power loss, high efficiency
PARAMETER VALUE UNIT
Ideal for automated placement
I 2 A
F(AV)
Guard ring for over-voltage protection
V 20 - 150 V
RRM
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
I 50 A
FSM
in accordance to WEEE 2002/96/EC
Package DO-214AA (SMB)
Halogen-free according to IEC 61249-2-21
Configuration Single Die
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix H means AEC-Q101 qualified
Packing code with suffix means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.093 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
PARAMETER SYMBOL SS22 SS23 SS24 SS25 SS26 SS29 SS210 SS215 UNIT
Marking code on the device SS22 SS23 SS24 SS25 SS26 SS29 SS210 SS215
Repetitive peak reverse voltage V 20 30 40 50 60 90 100 150 V
RRM
Reverse voltage, total rms value V 14 21 28 35 42 63 70 105 V
R(RMS)
Maximum DC blocking voltage V 20 30 40 50 60 90 100 150 V
DC
Forward current I 2 A
F(AV)
Surge peak forward current, 8.3 ms
single half sine-wave superimposed on I 50 A
FSM
rated load per diode
Critical rate of rise of off-state voltage dV/dt 10000 V/s
Junction temperature T - 55 to +125 - 55 to +150 C
J
Storage temperature T - 55 to +150 C
STG
1 Version:L1705
SS22 - SS215
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction-to-lead thermal resistance R 24 C/W
JL
Junction-to-ambient thermal resistance R 70 C/W
JA
ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted)
A
PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
SS22
- 0.50
SS23 V
SS24
SS25
(1)
- 0.70 V
Forward voltage per diode I = 2A,T = 25C V
F J F
SS26
SS29
- 0.85 V
SS210
- 0.95 V
SS215
SS22
- 0.40 V
SS23
SS24
SS25
(1)
Forward voltage per diode I = 2A,T = 100C V - 0.65 V
F J F
SS26
SS29
- 0.70 V
SS210
- 0.80 V
SS215
SS22
SS23
- 0.4
SS24 mA
SS25
Reverse current @ rated V per
R
T = 25C I
J R
(2)
SS26
diode
SS29
- 0.1 mA
SS210
SS215
SS22
- 10 mA
SS23
SS24
Reverse current @ rated V per SS25
R
T = 100C - 5 mA
I
J
(2) R
diode SS26
SS29
- - mA
SS210
SS215
2 Version:L1705