TESD5V0L1UC RJG Taiwan Semiconductor

TESD5V0L1UC Taiwan Semiconductor V = 5V, 2pF ESD Protection Diode WM FEATURES KEY PARAMETERS Meet IEC61000-4-2(ESD) 15kV(air) , 8kV(contact) PARAMETER VALUE UNIT Working Voltage: 5V P 100 W PPSM Moisture sensitivity level: level 1, per J-STD-020 I 3 A PP RoHS Compliant V 5 V WM Halogen-free according to IEC 61249-2-21 V at I = 1 mA 6 V BR R APPLICATIONS V at I = 3 A 15 V C PP High Speed Data Lines: USB 2.0 / VGA/ DVI /SDI Package DFN1006L Notebooks, Desktops and Servers Configuration Single die Touch Panel MECHANICAL DATA Case: DFN1006L Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 0.742mg (approximately) DFN1006L ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL TESD5V0L1UC UNIT Marking code on the device BH Rated random recurring peak Impulse power dissipation P 100 W PPSM (tp = 8/20s waveform) Peak impulse current (tp = 8/20s waveform) I 3 A PP ESD per IEC 61000-4-2 (Air) kV 15 V ESD ESD per IEC 61000-4-2 (Contact) kV 8 Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG 1 Version: E2007 TESD5V0L1UC Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (1) Reverse breakdown voltage I = 1 mA V 6 - 9.8 V R BR Rated working standoff voltage V - - 5 V WM (1) Reverse current V = 5 V I - - 0.1 A R R (2) Clamping voltage I = 1 A - - 10 V PP V C (2) Clamping voltage I = 3 A - - 15 V PP Junction capacitance f = 1MHz, V = 0V C - - 2 pF R J Notes: 1. Pulse test with PW = 30ms 2. tp = 8/20s waveform ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TESD5V0L1UC RJG DFN1006L 10K / 7 Reel 2 Version: E2007