TS9007 300mA Low Noise CMOS LDO SOT-25 DFN 2x2 Pin Definit ion: Pin Definition: 1. Input 1. Input 2. N/C 2. Ground 3. Output 3. Enable 4. N/C 4. Bypass 5. Ground 5. Output 6. Enable General Description The TS9007 series is 300mA ultra-low-noise LDO especially designed for battery-power RF and wireless applications. The TS9007 regulator achieves a low 450mV dropout at 300mA load current of 3.3V output, ultra-low output voltage noise of 15uVrms and PSRR of 57dB at 1KHz. The TS9007 regulators are also optimized to work with low-ESR and low cost ceramic capacitors reducing the amount of board space critical in hand-held devices. The TS9007 requires only 0.47uF output capacitor for stability with and load. The TS9007 consumes less than 1uA in shutdown mode. Features Ordering Information 450mV Dropout at 300mA load (3.3V) Part No. Package Packing Low quiescent current: 90A TS9007xCX5 RF SOT-25 3Kpcs / 7 Reel Output voltage 2% TS9007xCQ RF DFN 2x2 3Kpcs / 7 Reel Internal current limit and thermal shutdown Note: Where x denotes voltage option, available are Power saving shutdown mode (<1uA) 1= 1.2V Only need input and output capacitors A= 1.5V Build-In internal Soft-Start D= 1.8V Output short-circuit current limit protection K= 2.5V M= 2.7V Applications N= 2.8V Palmtops, PDA and Notebook Computers O= 2.9V DSC, Handset Camera Modules P= 3.0V PCMCIA Cards, PC Cameras S= 3.3V USB Based Portable Devices (MPS, PMP) Contact factory for additional voltage options. GSM/GPRS/3G RF Transceiver Modules Block Diagram Typical Application Circuit V V OUT IN EN C OUT 0.47uF on off C BYP 30nF EN (Pin 3) may be connected directly to V (Pin1) IN Low noise operation: C =30nF, C >0.47uF BYP OUT Basic operation: C =not used, C >1uF BYP OUT 1/8 Version: A07 TS9007 300mA Low Noise CMOS LDO Absolute Maximum Rating Parameter Symbol Limit Unit Supply Voltage V -0.3 ~ +7 V IN Input Supply Voltage (Recommended) V +2 ~ +6 V OPR Output Short-Circuit Duration Infinite SOT-25 300 Power Dissipation P mW D DFN 2x2 500 SOT-25 250 Thermal Resistance C/W JA DFN 2x2 165 Junction Temperature Range T +150 C J Storage Temperature Range T -65 ~ +150 C STG Notes: Stress above the listed absolute rating may cause permanent damage to the device. o Electrical Characteristics (T = 25 C, V = (V +1V), C =C =0.47uF, V =V , unless otherwise noted.) A IN OUT IN OUT EN IN Parameter Conditions Min Typ Max Unit V =V + 1V, I =10mA Output Voltage -2.0 -- +2 % IN O O Output Current Limit Short-circuit output -- 200 -- mA V =Vo+1V, Maximum Output Current 300 -- -- mA IN V =(V +1V) to 6V, I =10mA Line Regulation -- 0.3 -- %/V IN OUT O V =Vo+1V, 1mAIL300mA V 2.5V -- 0.2 1.0 IN OUT Load Regulation % V =Vo+1V, 1mAIL200mA V <2.5V -- 0.2 1.0 IN OUT Io=300mA, V =Vo - 2% V 2.5V -- 500 600 OUT OUT Dropout Voltage mV Io=200mA, V =Vo - 2% V <2.5V -- 800 1000 OUT OUT Shutdown Supply Current EN=0V -- 0.01 -- uA Ground Pin Current Io=0mA -- 90 150 uA f=100Hz, Io=1mA -- 60 -- Ripple Rejection (PSRR) dB f=1KHz, Io=1mA -- 57 -- f=10Hz, Io=1mA -- 45 -- Io=10mA, f=10Hz to 100kHz, -- 45 -- Bypass = 0nF Output Noise uVrms Io=10mA, f=10Hz to 100kHz, -- 15 -- Bypass = 30nF R = 50 Shutdown Exit Delay (note 2) -- 45 300 uS LOAD V =2.0V to 5.5V EN Logic Low Level -- -- 0.4 IN V V =2.0V to 5.5V EN Logic High Level 1.5 -- VIN IN V =2.0V to 5.5V EN Input Bias Current -- -- -- uA IN o Thermal Shutdown Shutdown Temperature -- 160 -- C o Thermal Shutdown Hysteresis -- 20 -- C Notes: a. The drop out voltage varies depending on output voltage selection. Dropout is defined as V - V when V is 100mV below V where V = Vout+1V for nominal V IN OUT OUT OUT IN OUT b. Time needed for V to reach 90% of final value OUT 2/8 Version: A07