TSA884CX RFG Taiwan Semiconductor

TSA884CX RFG electronic component of Taiwan Semiconductor
TSA884CX RFG Taiwan Semiconductor
TSA884CX RFG Bipolar Transistors - BJT
TSA884CX RFG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TSA884CX RFG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TSA884CX RFG Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. TSA884CX RFG
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT-23 -500V -0.15A PNP Bipolar Transistor
Datasheet: TSA884CX RFG Datasheet (PDF)
Price (USD)
1: USD 0.75 ea
Line Total: USD 0.75 
Availability : 0
  
QtyUnit Price
1$ 0.75
10$ 0.46
100$ 0.2817
500$ 0.2112
1000$ 0.1892
3000$ 0.1452
6000$ 0.1452
9000$ 0.1441
24000$ 0.1386

Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.318
15000$ 0.3173
21000$ 0.3164
24000$ 0.3156
30000$ 0.3147
45000$ 0.3139
60000$ 0.313
75000$ 0.3122
150000$ 0.3112


Availability 0
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.75
10$ 0.46
100$ 0.2817
500$ 0.2112
1000$ 0.1892
3000$ 0.1452
6000$ 0.1452
9000$ 0.1441
24000$ 0.1386


Availability 0
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0381
5$ 0.5509
25$ 0.3867
60$ 0.2632
164$ 0.2483

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSA884CX RFG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSA884CX RFG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 Pin D efinition: PRODUCT SUMMARY 1. Base 2. Emitter BV -500V CBO 3. Collector BV -500V CEO I -150mA C V -0.5V I / I = -50mA / -10mA CE(SAT) C B Features Ordering Information Low Saturation Voltages Part No. Package Packing Excellent gain characteristics specified up to -50mA TSA884CX RFG SOT-23 3Kpcs / 7 Reel Structure Note: G denotes for Halogen Free Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V -500 V CBO Collector-Emitter Voltage V -500 V CEO Emitter-Base Voltage V -5 V EBO DC -150 Collector Current I mA C Pulse -500 Total Power Dissipation P 0.3 W TOT Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T - 55 to +150 C STG Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage I = -100uA, I = 0 BV -500 -- -- V C E CBO Collector-Emitter Breakdown Voltage I = -10mA, I = 0 BV -500 -- -- V C B CEO Emitter-Base Breakdown Voltage I = -100uA, I = 0 BV -5 -- -- V E C EBO Collector Cutoff Current V = 120V, I = 0 I -- -- -100 nA CB E CBO Emitter Cutoff Current V = 6V, I = 0 I -- -- -100 nA EB C EBO I = -20mA, I = -2mA V 1 -- -- -0.2 C B CE(SAT) Collector-Emitter Saturation Voltage V I = -50mA, I = -10mA V 2 -- -0.5 C B CE(SAT) Base-Emitter Saturation Voltage I = -50mA, I = -10mA V -- -- -0.9 V C B BE(SAT) Base-Emitter on Voltage V = -10V, I = -50mA V -- -- -0.9 V CE C BE(ON) V = -10V, I = -1mA h 1 150 -- 300 CE C FE DC Current Transfer Ratio V = -10V, I = -50mA h 2 80 -- 300 CE C FE V = -10V, I = -100mA h 3 -- 15 -- CE C FE Transition Frequency V =10V, I =-100mA f -- 50 -- MHz CE C T Output Capacitance V = 20V, f=1MHz Cob -- -- 8 pF CB Turn On Time V = -100V, I = -50mA Ton -- 110 -- nS CE C Turn Off Time I =-5mA, I =-10mA Toff -- 1500 -- nS B1 B2 Document Number: DS P0000262 1 Version: E15 TSA884 PNP Silicon Planar High Voltage Transistor Electrical Characteristics Curve (Ta = 25C, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. V v.s. V Figure 4. Power Derating CE(SAT) BE(SAT Document Number: DS P0000262 2 Version: E15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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