Product Information

TSI10L200CW C0G

TSI10L200CW C0G electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 10A 200V Trench Schottky

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8745 ea
Line Total: USD 1.87

3878 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3878 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

TSI10L200CW C0G
Taiwan Semiconductor

1 : USD 1.8745
10 : USD 1.587
100 : USD 1.2995
500 : USD 1.1259
1000 : USD 0.9764
2500 : USD 0.966
4000 : USD 0.9591
12000 : USD 0.9281
28000 : USD 0.9051

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
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TSI10L200CW Taiwan Semiconductor 10A, 200V Trench Schottky Rectifier FEATURES KEY PARAMETERS Patented Trench Schottky technology PARAMETER VALUE UNIT Excellent high temperature stability I 10 A F Low forward voltage V 200 V RRM Low power loss/ high efficiency High forward surge capability I 100 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 2 Package TO-262 (I PAK) Configuration Dual dies APPLICATIONS Switching mode power supply (SMPS) Adapters DC to DC converter MECHANICAL DATA 2 Case: TO-262 (I PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test 2 TO-262 (I PAK) Polarity: As marked Weight: 1.60g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL TSI10H200CW UNIT Marking code on the device TSI10H200CW Repetitive peak reverse voltage V 200 V RRM Reverse voltage, total rms value V 140 V R(RMS) Forward current I 10 A F Surge peak forward current, 8.3ms single half sine wave I 100 A FSM superimposed on rated load Critical rate of rise of off-state voltage dv/dt 10,000 V/s Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: B2104 TSI10L200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 5 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 5A, T = 25C 0.84 0.90 V F J I = 10A, T = 25C 0.92 0.98 V F J (1) Forward voltage per diode V F I = 5A, T = 125C 0.72 0.78 V F J I = 10A, T = 125C 0.80 0.86 V F J T = 25C - 50 A J (2) Reverse current rated V per diode I R R T = 125C - 5 mA J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING 2 TSI10L200CW TO-262 (I PAK) 50 / Tube 2 Version: B2104

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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