VBE1106N VBsemi Elec

Name: VBE1106N
Brand: VBsemi Elec
SKU: VBE1106N_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

VBE1106N electronic component of VBsemi Elec

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VBE1106N MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBE1106N MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	VBE1106N
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Trench 100V 25A 1.6V @ 250uA 62 mÎ© @ 8A,4.5V TO-252 RoHS
Datasheet:	VBE1106N Datasheet (PDF)

Price (USD)

1: USD 0.629 ea
Line Total: USD 0.63

Availability : 37

Ship by Mon. 18 Aug to Thu. 21 Aug

Qty Unit Price
1 $ 0.629
10 $ 0.6124
30 $ 0.6014
100 $ 0.4004

VBE1106N More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 37

Ship by Mon. 18 Aug to Thu. 21 Aug

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 0.629
10 $ 0.6124
30 $ 0.6014
100 $ 0.4004

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Brand

Vbsemi Elec Vbsemi Elec

Rohs

Y Y

Package

TO - 252 TO - 252

Fet Type

N Channel N Channel

Drain To Source Voltagevdss

100 V 100 V

Continuous Drain Current Id @ 25°C

25 A 25 A

Vgsth Max @ Id

1.6V @ 250uA 1.6V @ 250uA

Rds On Max @ Id Vgs

62mO @ 8A,4.5V 62mO @ 8A,4.5V

Power Dissipation-Max Ta 25°C

83 W 83 W

Drain Source Voltage Vdss

100 V 100 V

Continuous Drain Current Id

25 A 25 A

Drain Source On Resistance Rdson@Vgs Id

62 mOhms @4.5V , 8A 62 mOhms @4.5V , 8A

Power Dissipation Pd

83 W 83 W

Gate Threshold Voltage Vgsth@Id

1.6 V @250uA 1.6 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

VBE1106N Alternative Parts

We are delighted to provide the VBE1106N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBE1106N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBE1106N is a MOSFET N Trench 100V 25A 1.6V @ 250uA 62 mÎ© @ 8A, 4.5V TO-252 RoHS manufactured by VBsemi Elec. This is an integrated circuit designed to provide efficient and reliable power switching functions in various applications such as power management and safety controls. It features an optimized gate charge, low on-state resistance, fast switching, low gate voltage drive and soft turn-on. It operates at a maximum drain voltage (VDS) of 100V and a maximum drain current (ID) of 25A. It is also designed with a low gate voltage (VGS) of 1.6V @ 250uA, and a low drain-source on-state resistance (RDS) of 62 mÎ© @ 8A. It is housed in a standard TO-252 RoHS package with four leads for easy mounting and secure connection.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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